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|Title:||Size control and charge storage mechanism of germanium nanocrystals in a metal-insulator-semiconductor structure||Authors:||Teo, L.W.
|Issue Date:||4-Nov-2002||Citation:||Teo, L.W., Choi, W.K., Chim, W.K., Ho, V., Moey, C.M., Tay, M.S., Heng, C.L., Lei, Y., Antoniadis, D.A., Fitzgerald, E.A. (2002-11-04). Size control and charge storage mechanism of germanium nanocrystals in a metal-insulator-semiconductor structure. Applied Physics Letters 81 (19) : 3639-3641. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1519355||Abstract:||The size of germanium (Ge) nanocrystals in a trilayer metal-insulator- semiconductor memory device was controlled by varying the thickness of the middle (co-sputtered Ge+SiO2) layer. From analyses using transmission electron microscopy and capacitance-voltage measurements, we deduced that both electrons and holes are most likely stored within the nanocrystals in the middle layer of the trilayer structure rather than at the interfaces of the nanocrystals with the oxide matrix. © 2002 American Institute of Physics.||Source Title:||Applied Physics Letters||URI:||http://scholarbank.nus.edu.sg/handle/10635/83031||ISSN:||00036951||DOI:||10.1063/1.1519355|
|Appears in Collections:||Staff Publications|
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