Please use this identifier to cite or link to this item:
|Title:||Size control and charge storage mechanism of germanium nanocrystals in a metal-insulator-semiconductor structure|
|Citation:||Teo, L.W., Choi, W.K., Chim, W.K., Ho, V., Moey, C.M., Tay, M.S., Heng, C.L., Lei, Y., Antoniadis, D.A., Fitzgerald, E.A. (2002-11-04). Size control and charge storage mechanism of germanium nanocrystals in a metal-insulator-semiconductor structure. Applied Physics Letters 81 (19) : 3639-3641. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1519355|
|Abstract:||The size of germanium (Ge) nanocrystals in a trilayer metal-insulator- semiconductor memory device was controlled by varying the thickness of the middle (co-sputtered Ge+SiO2) layer. From analyses using transmission electron microscopy and capacitance-voltage measurements, we deduced that both electrons and holes are most likely stored within the nanocrystals in the middle layer of the trilayer structure rather than at the interfaces of the nanocrystals with the oxide matrix. © 2002 American Institute of Physics.|
|Source Title:||Applied Physics Letters|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Oct 15, 2018
WEB OF SCIENCETM
checked on Oct 8, 2018
checked on Oct 12, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.