Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.1519355
Title: Size control and charge storage mechanism of germanium nanocrystals in a metal-insulator-semiconductor structure
Authors: Teo, L.W.
Choi, W.K. 
Chim, W.K. 
Ho, V.
Moey, C.M.
Tay, M.S.
Heng, C.L. 
Lei, Y. 
Antoniadis, D.A.
Fitzgerald, E.A.
Issue Date: 4-Nov-2002
Citation: Teo, L.W., Choi, W.K., Chim, W.K., Ho, V., Moey, C.M., Tay, M.S., Heng, C.L., Lei, Y., Antoniadis, D.A., Fitzgerald, E.A. (2002-11-04). Size control and charge storage mechanism of germanium nanocrystals in a metal-insulator-semiconductor structure. Applied Physics Letters 81 (19) : 3639-3641. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1519355
Abstract: The size of germanium (Ge) nanocrystals in a trilayer metal-insulator- semiconductor memory device was controlled by varying the thickness of the middle (co-sputtered Ge+SiO2) layer. From analyses using transmission electron microscopy and capacitance-voltage measurements, we deduced that both electrons and holes are most likely stored within the nanocrystals in the middle layer of the trilayer structure rather than at the interfaces of the nanocrystals with the oxide matrix. © 2002 American Institute of Physics.
Source Title: Applied Physics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/83031
ISSN: 00036951
DOI: 10.1063/1.1519355
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