Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.1519355
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dc.titleSize control and charge storage mechanism of germanium nanocrystals in a metal-insulator-semiconductor structure
dc.contributor.authorTeo, L.W.
dc.contributor.authorChoi, W.K.
dc.contributor.authorChim, W.K.
dc.contributor.authorHo, V.
dc.contributor.authorMoey, C.M.
dc.contributor.authorTay, M.S.
dc.contributor.authorHeng, C.L.
dc.contributor.authorLei, Y.
dc.contributor.authorAntoniadis, D.A.
dc.contributor.authorFitzgerald, E.A.
dc.date.accessioned2014-10-07T04:36:27Z
dc.date.available2014-10-07T04:36:27Z
dc.date.issued2002-11-04
dc.identifier.citationTeo, L.W., Choi, W.K., Chim, W.K., Ho, V., Moey, C.M., Tay, M.S., Heng, C.L., Lei, Y., Antoniadis, D.A., Fitzgerald, E.A. (2002-11-04). Size control and charge storage mechanism of germanium nanocrystals in a metal-insulator-semiconductor structure. Applied Physics Letters 81 (19) : 3639-3641. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1519355
dc.identifier.issn00036951
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/83031
dc.description.abstractThe size of germanium (Ge) nanocrystals in a trilayer metal-insulator- semiconductor memory device was controlled by varying the thickness of the middle (co-sputtered Ge+SiO2) layer. From analyses using transmission electron microscopy and capacitance-voltage measurements, we deduced that both electrons and holes are most likely stored within the nanocrystals in the middle layer of the trilayer structure rather than at the interfaces of the nanocrystals with the oxide matrix. © 2002 American Institute of Physics.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.1519355
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentSINGAPORE-MIT ALLIANCE
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1063/1.1519355
dc.description.sourcetitleApplied Physics Letters
dc.description.volume81
dc.description.issue19
dc.description.page3639-3641
dc.description.codenAPPLA
dc.identifier.isiut000178935200041
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