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Yee Chia Yeo

rp09882

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Full Name
Yee Chia Yeo
Variants
Yeo, Y.
Yeo Y.-C.
Yeo, Y.C.
Yeo, Y.-C.
Yeo., Y.-C.
 
Main Affiliation
 
Faculty
 
Email
eleyeoyc@nus.edu.sg
 

Publications

Refined By:
Date Issued:  [2000 TO 2023]
Type:  Article
Author:  Gong, X.

Results 1-20 of 27 (Search time: 0.008 seconds).

Issue DateTitleAuthor(s)
12012A self-aligned Ni-InGaAs contact technology for InGaAs channel n-MOSFETsZhang, X.; Ivana; Guo, H.X.; Gong, X.; Zhou, Q. ; Yeo, Y.-C. 
22010Fluorine incorporation in hfalo gate dielectric for defect passivation and effect on electrical characteristics of In0.53 Ga0.47 As n-MOSFETsChin, H.-C.; Gong, X.; Wang, L.; Yeo, Y.-C. 
328-Jul-2013Ge0.97Sn0.03 p-channel metal-oxide-semiconductor field-effect transistors: Impact of Si surface passivation layer thickness and post metal annealingGuo, P.; Han, G. ; Gong, X.; Liu, B.; Yang, Y.; Wang, W.; Zhou, Q. ; Pan, J.; Zhang, Z.; Soon Tok, E. ; Yeo, Y.-C. 
42013Germanium multiple-gate field-effect transistors formed on germanium-on-insulator substrateLiu, B.; Gong, X.; Zhan, C.; Han, G. ; Chin, H.-C.; Ling, M.-L.; Li, J.; Liu, Y.; Hu, J.; Daval, N.; Veytizou, C.; Delprat, D.; Nguyen, B.-Y.; Yeo, Y.-C. 
52013Germanium-tin (GeSn) p-channel MOSFETs fabricated on (100) and (111) surface orientations with Sub-400 °cSi2H6 passivationGong, X.; Han, G. ; Bai, F.; Su, S.; Guo, P.; Yang, Y.; Cheng, R. ; Zhang, D.; Zhang, G.; Xue, C.; Cheng, B.; Pan, J. ; Zhang, Z.; Tok, E.S. ; Antoniadis, D.; Yeo, Y.-C. 
62012Germanium-tin + junction formed using phosphorus ion implant and 400 °c rapid thermal annealWang, L.; Su, S.; Wang, W.; Yang, Y.; Tong, Y.; Liu, B.; Guo, P.; Gong, X.; Zhang, G.; Xue, C.; Cheng, B.; Han, G. ; Yeo, Y.-C. 
72014Germanium-Tin on Si avalanche photodiode: Device design and technology demonstrationDong, Y.; Wang, W. ; Xu, X.; Gong, X. ; Lei, D.; Zhou, Q. ; Xu, Z.; Loke, W.K.; Yoon, S.-F.; Liang, G. ; Yeo, Y.-C. 
8Dec-2013Germanium-tin p-channel tunneling field-effect transistor: Device design and technology demonstrationYang, Y.; Han, G.; Guo, P.; Wang, W.; Gong, X.; Wang, L.; Low, K.L.; Yeo, Y.-C. 
92012High-performance germanium ω-Gate MuGFET with schottky-barrier nickel germanide source/drain and low-temperature disilane-passivated gate stackLiu, B.; Gong, X.; Han, G. ; Lim, P.S.Y.; Tong, Y.; Zhou, Q. ; Yang, Y.; Daval, N.; Veytizou, C.; Delprat, D.; Nguyen, B.-Y.; Yeo, Y.-C. 
102018High-performance GeSn photodetector and fin field-effect transistor (FinFET) on an advanced GeSn-on-insulator platformWang, W. ; Lei, D. ; Huang, Y.-C.; Lee, K.H.; Loke, W.-K.; Dong, Y. ; Xu, S. ; Tan, C.S.; Wang, H.; Yoon, S.-F.; Gong, X. ; Yeo, Y.-C. 
11Feb-2011III-V multiple-gate field-effect transistors with high-mobility In 0.7Ga0.3As channel and epi-controlled retrograde-doped FinChin, H.-C.; Gong, X.; Wang, L.; Lee, H.K.; Shi, L.; Yeo, Y.-C. 
12Feb-2012In 0.53Ga 0.47As n-channel metal-oxide-semiconductor field-effect transistors with shallow metallic source and drain extensions and offset N + Doped Regions for Leakage SuppressionZhu, Z.; Gong, X.; Ivana; Yeo, Y.-C. 
132013In0.53Ga0.47As FinFETs with self-aligned molybdenum contacts and HfO2/Al2O3 gate dielectricZhang, X.; Guo, H.X.; Zhu, Z.; Gong, X.; Yeo, Y.-C. 
142011In0.7Ga0.3 as channel n-MOSFET with self-aligned Ni-InGaAs source and drainZhang, X.; Guo, H.; Gong, X.; Zhou, Q. ; Lin, Y.-R.; Lin, H.-Y.; Ko, C.-H.; Wann, C.H.; Yeo, Y.-C. 
152009Lattice-mismatched In0.4Ga0.6As Source/Drain stressors with In Situ doping for strained In0.53 Ga0.47 as channel n-MOSFETsChin, H.-C.; Gong, X.; Liu, X.; Yeo, Y.-C. 
162012Multiple-gate In0.53Ga0.47As channel n-MOSFETs with self-aligned Ni-InGaAs contactsZhang, X.; Guo, H.X.; Gong, X.; Yeo, Y.-C. 
1715-Jul-2010Nanoheteroepitaxy of gallium arsenide on strain-compliant silicon-germanium nanowiresChin, H.-C.; Gong, X.; Ng, T.K.; Loke, W.K.; Wong, C.P.; Shen, Z.; Wicaksono, S.; Yoon, S.F.; Yeo, Y.-C. 
184-Jul-2011Photoelectron spectroscopy study of band alignment at interface between Ni-InGaAs and In0.53Ga0.47AsIvana; Pan, J.; Zhang, Z.; Zhang, X.; Guo, H.; Gong, X.; Yeo, Y.-C. 
192011Reduction of off-state leakage current in In0.7Ga 0.3As channel n-MOSFETs with self-aligned Ni-InGaAs contact metallizationZhang, X.; Guo, H.; Lin, H.-Y.; Ivana; Gong, X.; Zhou, Q. ; Lin, Y.-R.; Ko, C.-H.; Wann, C.H.; Yeo, Y.-C. 
202013Relaxed and strained patterned germanium-tin structures: A Raman scattering studyCheng, R. ; Wang, W.; Gong, X.; Sun, L.; Guo, P.; Hu, H.; Shen, Z.; Han, G. ; Yeo, Y.-C.