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Yee Chia Yeo

rp09882

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Full Name
Yee Chia Yeo
Variants
Yeo, Y.
Yeo Y.-C.
Yeo, Y.C.
Yeo, Y.-C.
Yeo., Y.-C.
 
Main Affiliation
 
Faculty
 
Email
eleyeoyc@nus.edu.sg
 

Publications

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Date Issued:  [2000 TO 2009]
Department:  PHYSICS

Results 1-12 of 12 (Search time: 0.005 seconds).

Issue DateTitleAuthor(s)
12008Chemical reversability of the electrical dedoping of conducting polymers: An organic chemically erasable programmable read-only memoryChia, P.-J. ; Yeo, Y.-C. ; Burroughes, J.H.; Friend, R.H. ; Ho, P.K.-H. 
22008Compact HSPICE model for IMOS deviceLin, J. ; Toh, E.H.; Shen, C.; Sylvester, D.; Heng, C.H. ; Samudra, G. ; Yeo, Y.C. 
3Feb-2007Controlled insulator-to-metal transformation in printable polymer composites with nanometal clustersSivaramakrishnan, S. ; Chia, P.-J. ; Yeo, Y.-C. ; Chua, L.-L. ; Ho, P.K.-H. 
42006Dual metal gates with band-edge work functions on novel HfLaO high- κ gate dielectricWang, X.P.; Shen, C.; Li, M.-F. ; Yu, H.Y.; Sun, Y. ; Feng, Y.P. ; Lim, A.; Sik, H.W.; Chin, A.; Yeo, Y.C. ; Lo, P.; Kwong, D.L.
52005First principle study of Si and Ge band structure for UTB MOSFETs applicationsLow, T.; Feng, Y.P. ; Li, M.F. ; Samudra, G. ; Yeo, Y.C. ; Bai, P.; Chan, L.; Kwong, D.L.
63-Dec-2007Injection-induced de-doping in a conducting polymer during device operation: Asymmetry in the hole injection and extraction ratesChia, P.-J. ; Chua, L.-L. ; Sivaramakrishnan, S. ; Zhuo, J.-M. ; Zhao, L.-H.; Sim, W.-S. ; Yeo, Y.-C. ; Ho, P.K.-H. 
72004Negative U traps in HfO 2 gate dielectrics and frequency dependence of dynamic BTI in MOSFETsShen, C.; Li, M.F. ; Wang, X.P.; Yu, H.Y. ; Feng, Y.P. ; Lim, A.T.-L. ; Yeo, Y.C. ; Chan, D.S.H. ; Kwong, D.L.
82005New insights in hf based high-k gate dielectrics in mosfetsLi, M.-F. ; Zhu, C. ; Shen, C.; Yu, X.F.; Wang, X.P.; Feng, Y.P. ; Du, A.Y.; Yeo, Y.C. ; Samudra, G. ; Chin, A. ; Kwong, D.L. 
92007Novel epitaxial nickel aluminide-silicide with low Schottky-Barrier and series resistance for enhanced performance of dopant-segregated source/drain N-channel MuGFETsLee, R.T.P. ; Liow, T.-Y.; Tan, K.-M.; Lim, A.E.-J.; Ho, C.-S.; Hoe, K.-M.; Lai, M.Y.; Osipowicz, T. ; Lo, G.-Q.; Samudra, G. ; Chi, D.-Z.; Yeo, Y.-C. 
102008Performance enhancement schemes featuring lattice mismatched S/D stressors concurrently realized on CMOS platform: e-SiGeSn S/D for pFETs by Sn+ implant and SiC S/D for nFETs by C+ implantWang, G.H.; Toh, E.-H.; Wang, X.; Seng, D.H.L.; Tripathy, S.; Osipowicz, T. ; Tau, K.C.; Samudra, G. ; Yeo, Y.-C. 
112007Strained SiGeSn formed by Sn implant into SiGe and pulsed laser annealingWang, G.H.; Toh, E.-H.; Wang, X.; Tripathy, S.; Osipowicz, T. ; Chan, T.K. ; Hoe, K.-M.; Balakumar, S.; Lo, G.-Q.; Samudra, G. ; Yeo, Y.-C. 
12Apr-2007Wide Vfband Vth tunability for metal-gated MOS devices with HfLaO gate dielectricsWang, X.P.; Yu, H.Y.; Li, M.-F. ; Zhu, C.X. ; Biesemans, S.; Chin, A.; Sun, Y.Y.; Feng, Y.P. ; Lim, A.; Yeo, Y.-C. ; Loh, W.Y.; Lo, G.Q.; Kwong, D.-L.