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Yee Chia Yeo

rp09882

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Full Name
Yee Chia Yeo
Variants
Yeo, Y.
Yeo Y.-C.
Yeo, Y.C.
Yeo, Y.-C.
Yeo., Y.-C.
 
Main Affiliation
 
Faculty
 
Email
eleyeoyc@nus.edu.sg
 

Publications

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Type:  Article

Results 41-60 of 241 (Search time: 0.009 seconds).

Issue DateTitleAuthor(s)
4115-May-2010Dependence of the properties of phase change random access memory on nitrogen doping concentration in Ge2Sb2 Te5Fang, L.W.-W.; Zhao, R.; Li, M.; Lim, K.-G.; Shi, L.; Chong, T.-C. ; Yeo, Y.-C. 
4225-Apr-2008Device design and scalability of a double-gate tunneling field-effect transistor with silicon - germanium sourceToh, E.-H.; Wang, G.H.; Chan, L.; Sylvester, D.; Heng, C.-H. ; Samudra, G.S. ; Yeo, Y.-C. 
43Feb-2012Device physics and design of a L-shaped germanium source tunneling transistorLow, K.L.; Zhan, C.; Han, G. ; Yang, Y.; Goh, K.-H.; Guo, P.; Toh, E.-H.; Yeo, Y.-C. 
442007Device physics and design of double-gate tunneling field-effect transistor by silicon film thickness optimizationToh, E.-H.; Wang, G.H.; Samudra, G. ; Yeo, Y.-C. 
452008Device physics and design of germanium tunneling field-effect transistor with source and drain engineering for low power and high performance applicationsToh, E.-H.; Wang, G.H.; Samudra, G. ; Yeo, Y.-C. 
462007Device physics and guiding principles for the design of double-gate tunneling field effect transistor with silicon-germanium source heterojunctionToh, E.-H.; Wang, G.H.; Chan, L.; Samudra, G. ; Yeo, Y.-C. 
4725-Apr-2008Device physics and performance optimization of impact-ionization metal-oxide-semiconductor transistors formed using a double-spacer fabrication processToh, E.-H.; Wang, G.H.; Chan, L.; Samudra, G.S. ; Yeo, Y.-C. 
48Jul-2008Diamond-like carbon (DLC) liner: A new stressor for P-channel multiple-gate field-effect transistorsTan, K.-M.; Fang, W.-W.; Yang, M.; Liow, T.-Y.; Lee, R.T.-P. ; Balasubramanian, N.; Yeo, Y.-C. 
492017Digital etch technique for forming ultra-scaled germanium-tin (Ge 1-x Sn x) fin structureWang, W ; Lei, D ; Dong, Y ; Gong, X ; Tok, E.S ; Yeo, Y.-C 
50May-2012Dopant segregation and nickel stanogermanide contact formation on p +Ge 0.947Sn 0.053 source/drainHan, G. ; Su, S.; Zhou, Q. ; Guo, P.; Yang, Y.; Zhan, C.; Wang, L.; Wang, W.; Wang, Q.; Xue, C.; Cheng, B.; Yeo, Y.-C. 
51Sep-2006Drive-current enhancement in FinFETs using gate-induced stressTan, K.-M.; Liow, T.-Y.; Lee, R.T.P. ; Tung, C.-H.; Samudra, G.S. ; Yoo, W.-J. ; Yeo, Y.-C. 
522015Effect of body thickness on the electrical performance of ballistic n-channel GaSb double-gate ultrathin-body transistorGuo Y.; Zhang, X.; Low, K. L. ; Lam, K.-T. ; Yeo Y.-C. ; Liang, G. 
5319-Dec-2012Effect of growth temperature on the epitaxy strain relaxation and the tilt of InxAl1-x As graded layer grown by solid-source molecular beam epitaxyLoke, W.K.; Tan, K.H.; Wicaksono, S.; Yoon, S.F.; Owen, M.H.S.; Yeo, Y.-C. 
542009Effect of substitutional carbon concentration on Schottky-barrier height of nickel silicide formed on epitaxial silicon-carbon filmsLim, P.S.Y.; Lee, R.T.P. ; Sinha, M.; Chi, D.Z.; Yeo, Y.-C. 
55Jul-1998Effect of the (1010) crystal orientation on the optical gain of wurtzite GaN-AlGaN quantum-well lasersYeo, Y.C. ; Chong, T.C. ; Li, M.F. 
161-Oct-2010Effective method for preparation of oxide-free Ge2Sb 2Te5 surface: An X-ray photoelectron spectroscopy studyZhang, Z.; Pan, J.; Foo, Y.L.; Fang, L.W.-W.; Yeo, Y.-C. ; Zhao, R.; Shi, L.; Chong, T.-C. 
172009Effective modulation of quadratic voltage coefficient of capacitance in MIM capacitors using Sm2O3SiO2 dielectric stackYang, J.-J.; Chen, J.-D. ; Wise, R.; Steinmann, P.; Yu, M.-B.; Kwong, D.-L.; Li, M.-F.; Yeo, Y.-C. ; Zhu, C. 
18Dec-2007Effective Schottky Barrier height reduction using sulfur or selenium at the NiSi/n-Si (100) interface for low resistance contactsWong, H.-S.; Chan, L.; Samudra, G. ; Yeo, Y.-C. 
1925-Apr-2008Effectiveness of aluminum incorporation in nickel silicide and nickel germanide metal gates for work function reductionLim, A.E.-J.; Lee, R.T.P. ; Koh, A.T.Y.; Samudra, G.S. ; Kwong, D.-L. ; Yeo, Y.-C. 
20Oct-2007Electrical characteristics of memory devices with a high-k HfO2 trapping layer and dual SiO2/Si3 N4 tunneling layerWang, Y.Q.; Hwang, W.S.; Zhang, G.; Samudra, G. ; Yeo, Y.-C. ; Yoo, W.J.