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|Title:||Effect of body thickness on the electrical performance of ballistic n-channel GaSb double-gate ultrathin-body transistor||Authors:||Guo Y.
Low, K. L.
|Issue Date:||2015||Publisher:||Institute of Electrical and Electronics Engineers Inc.||Citation:||Guo Y., Zhang, X., Low, K. L., Lam, K.-T., Yeo Y.-C., Liang, G. (2015). Effect of body thickness on the electrical performance of ballistic n-channel GaSb double-gate ultrathin-body transistor. IEEE Transactions on Electron Devices 62 (3) : 788-794. ScholarBank@NUS Repository. https://doi.org/10.1109/TED.2014.2387194||Source Title:||IEEE Transactions on Electron Devices||URI:||http://scholarbank.nus.edu.sg/handle/10635/127349||ISSN:||189383||DOI:||10.1109/TED.2014.2387194|
|Appears in Collections:||Staff Publications|
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