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https://doi.org/10.1109/TED.2014.2387194
| Title: | Effect of body thickness on the electrical performance of ballistic n-channel GaSb double-gate ultrathin-body transistor | Authors: | Guo Y. Zhang, X. Low, K. L. Lam, K.-T. Yeo Y.-C. Liang, G. |
Issue Date: | 2015 | Publisher: | Institute of Electrical and Electronics Engineers Inc. | Citation: | Guo Y., Zhang, X., Low, K. L., Lam, K.-T., Yeo Y.-C., Liang, G. (2015). Effect of body thickness on the electrical performance of ballistic n-channel GaSb double-gate ultrathin-body transistor. IEEE Transactions on Electron Devices 62 (3) : 788-794. ScholarBank@NUS Repository. https://doi.org/10.1109/TED.2014.2387194 | Source Title: | IEEE Transactions on Electron Devices | URI: | http://scholarbank.nus.edu.sg/handle/10635/127349 | ISSN: | 189383 | DOI: | 10.1109/TED.2014.2387194 |
| Appears in Collections: | Staff Publications |
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