Please use this identifier to cite or link to this item:
https://doi.org/10.1109/TED.2014.2387194
Title: | Effect of body thickness on the electrical performance of ballistic n-channel GaSb double-gate ultrathin-body transistor | Authors: | Guo Y. Zhang, X. Low, K. L. Lam, K.-T. Yeo Y.-C. Liang, G. |
Issue Date: | 2015 | Publisher: | Institute of Electrical and Electronics Engineers Inc. | Citation: | Guo Y., Zhang, X., Low, K. L., Lam, K.-T., Yeo Y.-C., Liang, G. (2015). Effect of body thickness on the electrical performance of ballistic n-channel GaSb double-gate ultrathin-body transistor. IEEE Transactions on Electron Devices 62 (3) : 788-794. ScholarBank@NUS Repository. https://doi.org/10.1109/TED.2014.2387194 | Source Title: | IEEE Transactions on Electron Devices | URI: | http://scholarbank.nus.edu.sg/handle/10635/127349 | ISSN: | 189383 | DOI: | 10.1109/TED.2014.2387194 |
Appears in Collections: | Staff Publications |
Show full item record
Files in This Item:
There are no files associated with this item.
SCOPUSTM
Citations
9
checked on Jun 22, 2022
WEB OF SCIENCETM
Citations
9
checked on Jun 22, 2022
Page view(s)
109
checked on Jun 23, 2022
Google ScholarTM
Check
Altmetric
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.