Full Name
Chin Feng-Der,Albert
(not current staff)
Variants
Chin, A.
 
 
 
Email
elecfa@nus.edu.sg
 

Publications

Refined By:
Author:  Zhu, C.
Author:  Li, M.-F.
Date Issued:  2005

Results 1-7 of 7 (Search time: 0.004 seconds).

Issue DateTitleAuthor(s)
12005A new gate dielectric HfLaO with metal gate work function tuning capability and superior NMOSFETs performanceWang, X.P.; Li, M.F. ; Chin, A. ; Zhu, C. ; Chi, R.; Yu, X.F.; Shen, C.; Du, A.Y.; Chan, D.S.H. ; Kwong, D.-L.
22005High capacitance density (> 17 fF/μm2) Nb 2O5-based MIM capacitors for future RF IC applicationsKim, S.-J. ; Cho, B.J. ; Yu, M.B.; Li, M.-F. ; Xiong, Y.-Z.; Zhu, C. ; Chin, A. ; Kwong, D.-L.
32005Lanthanide and Ir-based dual metal-Gate/HfAlON CMOS with large work-function differenceYu, D.S.; Chin, A. ; Wu, C.H.; Li, M.-F. ; Zhu, C. ; Wang, S.J.; Yoo, W.J. ; Hung, B.F.; McAlister, S.P.
4Sep-2005Metal-insulator-metal RF bypass capacitor using niobium oxide (Nb2O5) with HfO2/Al2O3 barriersKim, S.-J. ; Cho, B.J. ; Yu, M.B.; Li, M.-F. ; Xiong, Y.-Z.; Zhu, C. ; Chin, A. ; Kwong, D.-L.
5Nov-2005Modeling study of the impact of surface roughness on silicon and germanium UTB MOSFETsLow, T.; Li, M.-F. ; Samudra, G. ; Yeo, Y.-C. ; Zhu, C. ; Chin, A. ; Kwong, D.-L.
62005New insights in hf based high-k gate dielectrics in mosfetsLi, M.-F. ; Zhu, C. ; Shen, C.; Yu, X.F.; Wang, X.P.; Feng, Y.P. ; Du, A.Y.; Yeo, Y.C. ; Samudra, G. ; Chin, A. ; Kwong, D.L. 
72005Strain-induced very low noise RF MOSFETs on flexible plastic substrateKao, H.L.; Chin, A. ; Hung, B.F.; Lai, J.M.; Lee, C.F.; Li, M.-F. ; Samudra, G.S. ; Zhu, C. ; Xia, Z.L.; Liu, X.Y.; Kang, J.F.