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Gengchiau Liang

rp08366

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Full Name
Gengchiau Liang
Variants
Liang, G.C.A.
Liang, G.
Liang, G.-C.
Liang, G.C.
 
Main Affiliation
 
Faculty
 
Email
elelg@nus.edu.sg
 

Publications

Results 1-20 of 90 (Search time: 0.005 seconds).

Issue DateTitleAuthor(s)
12019A Compact Model for 2-D Poly-MoS2 FETs With Resistive Switching in Postsynaptic SimulationWang, L. ; Wang, L.; Ang, K.-W. ; Thean, A.V.-Y. ; Liang, G. 
22009A computational evaluation of the designs of a novel nanoelectromechanical switch based on bilayer graphene nanoribbonLam, K.-T.; Liang, G. 
32010A computational study on the device performance of graphene nanoribbon heterojunction tunneling FETs based on bandgap engineeringLam, K.-T.; Da, H. ; Chin, S.-K.; Samudra, G. ; Yeo, Y.-C. ; Liang, G. 
4Apr-2009A computational study on the device performance of Graphene Nanoribbon resonant tunneling diodesTeong, H.; Lam, K.-T.; Liang, G. 
52008A first-principles study on edge doping of armchair graphene nanoribbonKai, T.L.; Liang, G. 
611-Jun-2008A pseudopotential method for investigating the surface roughness effect in ultrathin body transistorsZhu, Z.-G.; Liang, G. ; Li, M.-F. ; Samudra, G. 
7Jun-2010A simulation study of graphene-nanoribbon tunneling FET with heterojunction channelLam, K.-T.; Seah, D.; Chin, S.-K.; Bala Kumar, S. ; Samudra, G. ; Yeo, Y.-C. ; Liang, G. 
819-Aug-2019All-electric magnetization switching and Dzyaloshinskii–Moriya interaction in WTe2/ferromagnet heterostructuresShuyuan Shi ; Shiheng Liang ; Zhifeng Zhu ; Kaiming Cai ; Shawn D. Pollard ; Yi Wang ; Junyong Wang ; Qisheng Wang ; Pan He ; Jiawei Yu ; Goki Eda ; Gengchiau Liang ; Hyunsoo Yang 
927-Dec-2010Ambipolar bistable switching effect of grapheneShin, Y.J.; Kwon, J.H.; Kalon, G. ; Lam, K.-T.; Bhatia, C.S. ; Liang, G. ; Yang, H. 
102008An ab initio investigation of monolayer and bilayer graphene nanoribbon based on different basis setsLam, K.-T.; Liang, G. 
112008An ab initio study on energy gap of bilayer graphene nanoribbons with armchair edgesLam, K.-T.; Liang, G. 
122007Ballistic graphene nanoribbon metal-oxide-semiconductor field-effect transistors: A full real-space quantum transport simulationLiang, G. ; Neophytou, N.; Lundstrom, M.S.; Nikonov, D.E.
132014Ballistic transport performance of silicane and germanane transistorsLow, K.L.; Huang, W.; Yeo, Y.-C. ; Liang, G. 
142009Bilayer graphene nanoribbon nanoelectromechanical system device: A computational studyLam, K.-T.; Lee, C. ; Liang, G. 
152008Computational study of double-gate graphene nano-ribbon transistorsLiang, G. ; Neophytou, N.; Lundstrom, M.S.; Nikonov, D.E.
162009Computational study of graphene nanoribbon resonant tunneling diodesLiang, G. ; Teong, H.; Lam, K.-T.
172009Computational study on the performance comparison of monolayer and bilayer zigzag graphene nanoribbon FETsLam, K.-T.; Liang, G. 
181-Apr-2011Conductance modulation in graphene nanoribbon under transverse asymmetric electric potentialBala Kumar, S. ; Fujita, T. ; Liang, G. 
19Jul-2008Contact effects in graphene nanoribbon transistorsLiang, G. ; Neophytou, N.; Lundstrom, M.S.; Nikonov, D.E.
202015Contact Effects in thin 3D-Topological Insulators: How does the current flow?Gupta, G ; Jalil, M.B.A ; Liang, G