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|Title:||Computational study on the performance comparison of monolayer and bilayer zigzag graphene nanoribbon FETs||Authors:||Lam, K.-T.
|Issue Date:||2009||Citation:||Lam, K.-T.,Liang, G. (2009). Computational study on the performance comparison of monolayer and bilayer zigzag graphene nanoribbon FETs. Proceedings - 2009 13th International Workshop on Computational Electronics, IWCE 2009 : -. ScholarBank@NUS Repository. https://doi.org/10.1109/IWCE.2009.5091098||Abstract:||In our ab initio study on the device performance of nitrogen-doped monolayer zigzag GNR (ZGNR) FETs, an increase in ZGNR width from 0.92 nm to 1.78 nm degrades the I max/I min ratio due to the decrease in the energy bandgap (E g) which causes the I min to increase. It is also observed that the presence of vacancy at the edges of the channel ribbon can also open up an E g in ZGNRs as nitrogen dopants, and the performance of such device depends greatly on the vacancy concentration. In addition, simulation was carried out on the nitrogen-doped bilayer ZGNR FET and comparing to the monolayer ZGNR FET, the bilayer device provides a larger current while the I max/I min is lowered. ©2009 IEEE.||Source Title:||Proceedings - 2009 13th International Workshop on Computational Electronics, IWCE 2009||URI:||http://scholarbank.nus.edu.sg/handle/10635/83572||ISBN:||9781424439270||DOI:||10.1109/IWCE.2009.5091098|
|Appears in Collections:||Staff Publications|
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