Please use this identifier to cite or link to this item: https://doi.org/10.1109/IWCE.2009.5091098
Title: Computational study on the performance comparison of monolayer and bilayer zigzag graphene nanoribbon FETs
Authors: Lam, K.-T.
Liang, G. 
Issue Date: 2009
Citation: Lam, K.-T.,Liang, G. (2009). Computational study on the performance comparison of monolayer and bilayer zigzag graphene nanoribbon FETs. Proceedings - 2009 13th International Workshop on Computational Electronics, IWCE 2009 : -. ScholarBank@NUS Repository. https://doi.org/10.1109/IWCE.2009.5091098
Abstract: In our ab initio study on the device performance of nitrogen-doped monolayer zigzag GNR (ZGNR) FETs, an increase in ZGNR width from 0.92 nm to 1.78 nm degrades the I max/I min ratio due to the decrease in the energy bandgap (E g) which causes the I min to increase. It is also observed that the presence of vacancy at the edges of the channel ribbon can also open up an E g in ZGNRs as nitrogen dopants, and the performance of such device depends greatly on the vacancy concentration. In addition, simulation was carried out on the nitrogen-doped bilayer ZGNR FET and comparing to the monolayer ZGNR FET, the bilayer device provides a larger current while the I max/I min is lowered. ©2009 IEEE.
Source Title: Proceedings - 2009 13th International Workshop on Computational Electronics, IWCE 2009
URI: http://scholarbank.nus.edu.sg/handle/10635/83572
ISBN: 9781424439270
DOI: 10.1109/IWCE.2009.5091098
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

SCOPUSTM   
Citations

2
checked on Jun 15, 2019

Page view(s)

46
checked on Jun 14, 2019

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.