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|Title:||A first-principles study on edge doping of armchair graphene nanoribbon||Authors:||Kai, T.L.
|Issue Date:||2008||Citation:||Kai, T.L.,Liang, G. (2008). A first-principles study on edge doping of armchair graphene nanoribbon. 2008 2nd IEEE International Nanoelectronics Conference, INEC 2008 : 109-111. ScholarBank@NUS Repository. https://doi.org/10.1109/INEC.2008.4585448||Abstract:||We present our ab initio calculations on the edge-doping effects of graphene nanoribbon (GNR) with hydrogen passivated armchair edges. Boron [Nitrogen] atoms are introduced to the GNR by substituting carbon atoms at the edges. Initial introduction of boron [nitrogen] atom decreases [increases] the Fermi level of the armchair GNR (AGNR), creating a p-type [n-type] semiconductor. Higher concentration of boron [nitrogen] atoms further decreases [increases] the Fermi level. Based on these observation, a p-i-n AGNR heterstructure is simulated and the transmission coefficient and current-voltage characteristic are also calculated. © 2008 IEEE.||Source Title:||2008 2nd IEEE International Nanoelectronics Conference, INEC 2008||URI:||http://scholarbank.nus.edu.sg/handle/10635/68802||ISBN:||9781424415731||DOI:||10.1109/INEC.2008.4585448|
|Appears in Collections:||Staff Publications|
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