Please use this identifier to cite or link to this item:
|Title:||A first-principles study on edge doping of armchair graphene nanoribbon|
|Source:||Kai, T.L.,Liang, G. (2008). A first-principles study on edge doping of armchair graphene nanoribbon. 2008 2nd IEEE International Nanoelectronics Conference, INEC 2008 : 109-111. ScholarBank@NUS Repository. https://doi.org/10.1109/INEC.2008.4585448|
|Abstract:||We present our ab initio calculations on the edge-doping effects of graphene nanoribbon (GNR) with hydrogen passivated armchair edges. Boron [Nitrogen] atoms are introduced to the GNR by substituting carbon atoms at the edges. Initial introduction of boron [nitrogen] atom decreases [increases] the Fermi level of the armchair GNR (AGNR), creating a p-type [n-type] semiconductor. Higher concentration of boron [nitrogen] atoms further decreases [increases] the Fermi level. Based on these observation, a p-i-n AGNR heterstructure is simulated and the transmission coefficient and current-voltage characteristic are also calculated. © 2008 IEEE.|
|Source Title:||2008 2nd IEEE International Nanoelectronics Conference, INEC 2008|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Dec 9, 2017
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.