Please use this identifier to cite or link to this item: https://doi.org/10.1109/INEC.2008.4585448
Title: A first-principles study on edge doping of armchair graphene nanoribbon
Authors: Kai, T.L.
Liang, G. 
Issue Date: 2008
Source: Kai, T.L.,Liang, G. (2008). A first-principles study on edge doping of armchair graphene nanoribbon. 2008 2nd IEEE International Nanoelectronics Conference, INEC 2008 : 109-111. ScholarBank@NUS Repository. https://doi.org/10.1109/INEC.2008.4585448
Abstract: We present our ab initio calculations on the edge-doping effects of graphene nanoribbon (GNR) with hydrogen passivated armchair edges. Boron [Nitrogen] atoms are introduced to the GNR by substituting carbon atoms at the edges. Initial introduction of boron [nitrogen] atom decreases [increases] the Fermi level of the armchair GNR (AGNR), creating a p-type [n-type] semiconductor. Higher concentration of boron [nitrogen] atoms further decreases [increases] the Fermi level. Based on these observation, a p-i-n AGNR heterstructure is simulated and the transmission coefficient and current-voltage characteristic are also calculated. © 2008 IEEE.
Source Title: 2008 2nd IEEE International Nanoelectronics Conference, INEC 2008
URI: http://scholarbank.nus.edu.sg/handle/10635/68802
ISBN: 9781424415731
DOI: 10.1109/INEC.2008.4585448
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