Bilayer graphene nanoribbon nanoelectromechanical system device: A computational study

Abstract

A bilayer graphene nanoribbon nanoelectromechanical device is investigated via first-principle simulations. The output characteristics as a function of interlayer distance are calculated, with the proposed device acting as a displacement and a force sensor. The operating mechanism of a bistable switch based on this device structure is also explored, and in the present floating gate design, a switching gate bias of 5.6 V is required, resulting in an ON-OFF current ratio of 3 orders at a device bias of 20 mV. This minuscule bistable device could potentially be implemented in future semiconductor memory devices and radio frequency communication circuitry. © 2009 American Institute of Physics.