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|Title:||Bilayer graphene nanoribbon nanoelectromechanical system device: A computational study||Authors:||Lam, K.-T.
|Issue Date:||2009||Citation:||Lam, K.-T., Lee, C., Liang, G. (2009). Bilayer graphene nanoribbon nanoelectromechanical system device: A computational study. Applied Physics Letters 95 (14) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3243695||Abstract:||A bilayer graphene nanoribbon nanoelectromechanical device is investigated via first-principle simulations. The output characteristics as a function of interlayer distance are calculated, with the proposed device acting as a displacement and a force sensor. The operating mechanism of a bistable switch based on this device structure is also explored, and in the present floating gate design, a switching gate bias of 5.6 V is required, resulting in an ON-OFF current ratio of 3 orders at a device bias of 20 mV. This minuscule bistable device could potentially be implemented in future semiconductor memory devices and radio frequency communication circuitry. © 2009 American Institute of Physics.||Source Title:||Applied Physics Letters||URI:||http://scholarbank.nus.edu.sg/handle/10635/55202||ISSN:||00036951||DOI:||10.1063/1.3243695|
|Appears in Collections:||Staff Publications|
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