1. ScholarBank@NUS

KALON GOPINADHAN

rp07406

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Full Name
KALON GOPINADHAN
(not current staff)
Variants
Kalon, G.
Gopinadhan, K.
 
Main Affiliation
 
Faculty
 
Email
elekg@nus.edu.sg
 

Publications

Refined By:
Date Issued:  [2000 TO 2023]
Date Issued:  [2010 TO 2019]

Results 21-35 of 35 (Search time: 0.005 seconds).

Issue DateTitleAuthor(s)
2113-Oct-2016Molecular transport through capillaries made with atomic-scale precisionRadha, B; Esfandiar, A; Wang, FC; Rooney, AP; Gopinadhan, K ; Keerthi, A; Mishchenko, A; Janardanan, A; Blake, P ; Fumagalli, L; Lozada-Hidalgo, M; Garaj, S ; Haigh, SJ; Grigorieva, IV; Wu, HA; Geim, AK 
2214-Feb-2011Multifunctional Ti1-x Tax O2: Ta doping or alloying?Barman, A.R.; Motapothula, M.; Annadi, A.; Gopinadhan, K. ; Zhao, Y.L.; Yong, Z.; Santoso, I. ; Ariando ; Breese, M. ; Rusydi, A. ; Dhar, S. ; Venkatesan, T. 
315-Oct-2012Parallel-leaky capacitance equivalent circuit model for MgO magnetic tunnel junctionsSahadevan, A.M.; Gopinadhan, K. ; Bhatia, C.S. ; Yang, H. 
47-Oct-2011Reversible metal-insulator transition in LaAlO3 thin films mediated by intragap defects: An alternative mechanism for resistive switchingLiu, Z.Q.; Leusink, D.P.; Lü, W.M.; Wang, X.; Yang, X.P.; Gopinadhan, K. ; Lin, Y.T.; Annadi, A.; Zhao, Y.L.; Barman, A.R.; Dhar, S. ; Feng, Y.P. ; Su, H.B.; Xiong, G.; Venkatesan, T. ; Ariando 
52015Selective growth of single phase VO2(A, B, and M) polymorph thin filmsSrivastava, A ; Rotella, H ; Saha, S ; Pal, B; Kalon, G ; Mathew, S ; Motapothula, M ; Dykas, M ; Yang, P ; Okunishi, E; Sarma, D.D; Venkatesan, T 
2627-Oct-2017Size effect in ion transport through angstrom-scale slitsEsfandiar, A; Radha, B; Wang, FC; Yang, Q; Hu, S; Garaj, S ; Nair, RR; Geim, AK ; Gopinadhan, K 
2721-Jan-2013Stochastic nonlinear electrical characteristics of grapheneJun Shin, Y.; Gopinadhan, K. ; Narayanapillai, K.; Kalitsov, A.; Bhatia, C.S. ; Yang, H. 
2816-Mar-2010Surface-energy engineering of grapheneShin, Y.J.; Wang, Y.; Huang, H. ; Kalon, G. ; Wee, A.T.S. ; Shen, Z.; Bhatia, C.S. ; Yang, H. 
2926-Nov-2012Tailoring the electronic properties of SrRuO3 films in SrRuO3/LaAlO3 superlatticesLiu, Z.Q.; Ming, Y. ; Lü, W.M.; Huang, Z.; Wang, X.; Zhang, B.M.; Li, C.J.; Gopinadhan, K. ; Zeng, S.W.; Annadi, A.; Feng, Y.P. ; Venkatesan, T. ; Ariando 
30Apr-2011The effect of layer number and substrate on the stability of graphene under MeV proton beam irradiationMathew, S. ; Chan, T.K. ; Zhan, D.; Gopinadhan, K. ; Barman, A.-R.; Breese, M.B.H. ; Dhar, S. ; Shen, Z.X.; Venkatesan, T. ; Thong, J.T.L. 
3122-Aug-2011The role of charge traps in inducing hysteresis: Capacitance-voltage measurements on top gated bilayer grapheneKalon, G. ; Jun Shin, Y.; Giang Truong, V.; Kalitsov, A.; Yang, H. 
326-Jun-2011Tunable metal-insulator transitions in bilayer graphene by thermal annealingKalon, G. ; Shin, Y.J.; Yang, H. 
3320-Dec-2010Tunneling characteristics of grapheneShin, Y.J.; Kalon, G. ; Son, J.; Kwon, J.H.; Niu, J.; Bhatia, C.S. ; Liang, G. ; Yang, H. 
342015Unexpected observation of spatially separated Kondo scattering and ferromagnetism in Ta alloyed anatase TiO2 thin filmsSarkar T.P. ; Gopinadhan K. ; Motapothula M. ; Saha S. ; Huang Z. ; Dhar S. ; Patra A. ; Lu W.M.; Telesio F.; Pallecchi I.; Ariando ; Marré D.; Venkatesan T. 
3526-Nov-2012Universal scaling of resistivity in bilayer grapheneGopinadhan, K. ; Jun Shin, Y.; Yang, H.