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|Title:||The role of charge traps in inducing hysteresis: Capacitance-voltage measurements on top gated bilayer graphene||Authors:||Kalon, G.
Jun Shin, Y.
Giang Truong, V.
|Issue Date:||22-Aug-2011||Citation:||Kalon, G., Jun Shin, Y., Giang Truong, V., Kalitsov, A., Yang, H. (2011-08-22). The role of charge traps in inducing hysteresis: Capacitance-voltage measurements on top gated bilayer graphene. Applied Physics Letters 99 (8) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3626854||Abstract:||Understanding the origin of hysteresis in the channel resistance from top gated graphene transistors is important for transistor applications. Capacitance-voltage measurements across the gate oxide on top gated bilayer graphene show hysteresis with a charging and discharging time constant of ∼100 s. However, the measured capacitance across the graphene channel does not show any hysteresis but shows an abrupt jump at a high channel voltage due to the emergence of an order, indicating that the origin of hysteresis between gate and source is due to charge traps present in the gate oxide and graphene interface. © 2011 American Institute of Physics.||Source Title:||Applied Physics Letters||URI:||http://scholarbank.nus.edu.sg/handle/10635/57634||ISSN:||00036951||DOI:||10.1063/1.3626854|
|Appears in Collections:||Staff Publications|
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