Surface-energy engineering of graphene

Please use this identifier to cite or link to this item: https://doi.org/10.1021/la100231u

Title:	Surface-energy engineering of graphene
Authors:	Shin, Y.J. Wang, Y. Huang, H. Kalon, G. Wee, A.T.S. Shen, Z. Bhatia, C.S. Yang, H.
Issue Date:	16-Mar-2010
Citation:	Shin, Y.J., Wang, Y., Huang, H., Kalon, G., Wee, A.T.S., Shen, Z., Bhatia, C.S., Yang, H. (2010-03-16). Surface-energy engineering of graphene. Langmuir 26 (6) : 3798-3802. ScholarBank@NUS Repository. https://doi.org/10.1021/la100231u
Abstract:	Contact angle goniometry is conducted for epitaxial graphene on SiC. Although only a single layer of epitaxial graphene exists on SiC, the contact angle drastically changes from 69° on SiC substrates to 92° on graphene. It is found that there is no thickness dependence of the contact angle from the measurements of single-, bi-, and multilayer graphene and highly ordered pyrolytic graphite (HOPG). After graphene is treated with oxygen plasma, the level of damage is investigated by Raman spectroscopy and the correlation between the level of disorder and wettability is reported. By using a low-power oxygen plasma treatment, the wettability of graphene is improved without additional damage, which can solve the adhesion issues involved in the fabrication of graphene devices. © 2010 American Chemical Society.
Source Title:	Langmuir
URI:	http://scholarbank.nus.edu.sg/handle/10635/57563
ISSN:	07437463
DOI:	10.1021/la100231u
Appears in Collections:	Staff Publications

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