Surface-energy engineering of graphene
Shin, Y.J. Wang, Y. Huang, H. Kalon, G. Wee, A.T.S. Shen, Z. Bhatia, C.S. Yang, H.
Shin, Y.J.
Wang, Y.
Shen, Z.
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Abstract
Contact angle goniometry is conducted for epitaxial graphene on SiC. Although only a single layer of epitaxial graphene exists on SiC, the contact angle drastically changes from 69° on SiC substrates to 92° on graphene. It is found that there is no thickness dependence of the contact angle from the measurements of single-, bi-, and multilayer graphene and highly ordered pyrolytic graphite (HOPG). After graphene is treated with oxygen plasma, the level of damage is investigated by Raman spectroscopy and the correlation between the level of disorder and wettability is reported. By using a low-power oxygen plasma treatment, the wettability of graphene is improved without additional damage, which can solve the adhesion issues involved in the fabrication of graphene devices. © 2010 American Chemical Society.
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Langmuir
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Date
2010-03-16
DOI
10.1021/la100231u
Type
Article