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|Title:||Parallel-leaky capacitance equivalent circuit model for MgO magnetic tunnel junctions||Authors:||Sahadevan, A.M.
|Issue Date:||15-Oct-2012||Citation:||Sahadevan, A.M., Gopinadhan, K., Bhatia, C.S., Yang, H. (2012-10-15). Parallel-leaky capacitance equivalent circuit model for MgO magnetic tunnel junctions. Applied Physics Letters 101 (16) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.4760279||Abstract:||The capacitance of MgO based magnetic tunnel junctions (MTJs) has been observed to be magnetic field dependent. We propose an equivalent circuit for the MTJs with a parallel-leaky capacitance (C l) across the series combination of geometric and interfacial capacitance. The analysis of junctions with different tunneling magnetoresistance (TMR) values suggests higher C l for low TMR junctions. Using Cole-Cole plots, the capacitive nature of MTJs is manifested. Fitting with Maxwell-Wagner capacitance model validates the RC parallel network model for MTJs and the extracted field dependent parameters match with the experimental values. © 2012 American Institute of Physics.||Source Title:||Applied Physics Letters||URI:||http://scholarbank.nus.edu.sg/handle/10635/82863||ISSN:||00036951||DOI:||10.1063/1.4760279|
|Appears in Collections:||Staff Publications|
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