Selective growth of single phase VO2(A, B, and M) polymorph thin films

Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.4906880

Title:	Selective growth of single phase VO2(A, B, and M) polymorph thin films
Authors:	Srivastava, A Rotella, H Saha, S Pal, B Kalon, G Mathew, S Motapothula, M Dykas, M Yang, P Okunishi, E Sarma, D.D Venkatesan, T
Issue Date:	2015
Citation:	Srivastava, A, Rotella, H, Saha, S, Pal, B, Kalon, G, Mathew, S, Motapothula, M, Dykas, M, Yang, P, Okunishi, E, Sarma, D.D, Venkatesan, T (2015). Selective growth of single phase VO2(A, B, and M) polymorph thin films. APL Materials 3 (2) : 26101. ScholarBank@NUS Repository. https://doi.org/10.1063/1.4906880
Abstract:	We demonstrate the growth of high quality single phase films of VO2(A, B, and M) on SrTiO3 substrate by controlling the vanadium arrival rate (laser frequency) and oxidation of the V atoms. A phase diagram has been developed (oxygen pressure versus laser frequency) for various phases of VO2 and their electronic properties are investigated. VO2(A) phase is insulating VO2(B) phase is semi-metallic, and VO2(M) phase exhibits a metal-insulator transition, corroborated by photo-electron spectroscopic studies. The ability to control the growth of various polymorphs opens up the possibility for novel (hetero)structures promising new device functionalities. © 2015 Author(s).
Source Title:	APL Materials
URI:	https://scholarbank.nus.edu.sg/handle/10635/176151
ISSN:	2166-532X
DOI:	10.1063/1.4906880
Appears in Collections:	Elements Staff Publications

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