Full Name
Chan Siu Hung,Daniel
(not current staff)
Variants
Chan, Daniel S.H.
CHAN, DANIEL S. H.
Chan, D.S.-H.
Chan, D.S.H.
CHAN SIU HUNG DANIEL
CHAN, DANIEL SIU HUNG
Daniel Chan, S.H.
Chan, D.
CHAN, D. S. H.
 
 
 
Email
elecshd@nus.edu.sg
 

Refined By:
Date Issued:  [2000 TO 2021]
Subject:  Metal gate

Results 1-8 of 8 (Search time: 0.006 seconds).

Issue DateTitleAuthor(s)
1Nov-2007CMOS compatible dual metal gate integration with successful Vth adjustment on high-k HfTaON by high-temperature metal intermixingRen, C.; Chan, D.S.H. ; Loh, W.Y.; Lo, G.Q.; Balasubramanian, N.; Kwong, D.-L.
2May-2004Fermi pinning-induced thermal instability of metal-gate work functionsYu, H.Y. ; Ren, C.; Yeo, Y.-C. ; Kang, J.F. ; Wang, X.P.; Ma, H.H.H. ; Li, M.-F. ; Chan, D.S.H. ; Kwong, D.-L.
3Mar-2004Fermi-Level Pinning Induced Thermal Instability in the Effective Work Function of TaN in TaN/SiO 2 Gate StackRen, C.; Yu, H.Y. ; Kang, J.F. ; Hou, Y.T. ; Li, M.-F. ; Wang, W.D.; Chan, D.S.H. ; Kwong, D.-L.
42007Interface barrier abruptness and work function requirements for scaling Schottky source-drain MOS transistorsAgrawal, N.; Chen, J. ; Hui, Z.; Yeo, Y.-C. ; Lee, S. ; Chan, D.S.H. ; Li, M.-F. ; Samudra, G.S. 
52008Metal carbides for band-edge work function metal gate CMOS devicesHwang, W.S.; Chan, D.S.H. ; Cho, B.J.
6Jun-2006Physical and electrical characteristics of high-κ gate dielectric Hf(1-x)LaxOyWang, X.P.; Li, M.F. ; Chin, A. ; Zhu, C.X. ; Shao, J.; Lu, W.; Shen, X.C.; Yu, X.F.; Chi, R.; Shen, C.; Huan, A.C.H.; Pan, J.S.; Du, A.Y.; Lo, P.; Chan, D.S.H. ; Kwong, D.-L. 
7May-2004Schottky-barrier S/D MOSFETs with high-K gate dielectrics and metal-gate electrodeZhu, S. ; Yu, H.Y. ; Whang, S.J. ; Chen, J.H. ; Shen, C.; Zhu, C. ; Lee, S.J. ; Li, M.F. ; Chan, D.S.H. ; Yoo, W.J. ; Du, A.; Tung, C.H. ; Singh, J.; Chin, A.; Kwong, D.L.
82006Work-function tuning of TaN by high-temperature metal intermixing technique for gate-first CMOS processRen, C.; Chan, D.S.H. ; Loh, W.Y.; Balakumar, S.; Du, A.Y.; Tung, C.H.; Lo, G.Q.; Kumar, R.; Balasubramanian, N.; Kwong, D.-L.