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Osipowicz Thomas

rp05639

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Full Name
Osipowicz Thomas
Variants
Osipowitcz, T.
Osipowicz, T.
OSIPOWICZ, THOMAS
Osiposwicz, T.
Thomas, O.
Osipowice, T.
Osipowicz Thomas
 
Main Affiliation
 
Faculty
 
Email
phyto@nus.edu.sg
 

Publications

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Type:  Conference Paper
Department:  ELECTRICAL & COMPUTER ENGINEERING

Results 1-13 of 13 (Search time: 0.008 seconds).

Issue DateTitleAuthor(s)
12002A study of the decomposition of GaN during annealing over a wide range of temperaturesRana, M.A.; Choi, H.W.; Breese, M.B.H. ; Osipowicz, T. ; Chua, S.J. ; Watt, F. 
22005Analysis of E-field distributions within high-power devices using IBIC microscopyZmeck, M.; Balk, L.J.; Heiderhoff, R.; Osipowicz, T. ; Watt, F. ; Phang, J.C.H. ; Khambadkone, A.M. ; Niedernostheide, F.-J.; Schulze, H.-J.
32005Analysis of premature breakdown in high-power devices using IBIC microscopyZmeck, M.; Balk, L.J.; Pugatschow, A.; Niedernostheide, F.-J.; Schulze, H.-J.; Osipowicz, T. ; Watt, F. ; Phang, J.C.H. ; Khambadkone, A.M. 
41-Aug-2004Depth-resolved luminescence imaging of epitaxial lateral overgrown GaN using ionoluminescenceTeo, E.J. ; Bettiol, A.A. ; Osipowicz, T. ; Hao, M.; Chua, S.J. ; Liu, Y.Y. 
5Jan-2002Enhanced stability of Ni monosilicide on MOSFETs poly-Si gate stackLee, P.S.; Mangelinck, D.; Pey, K.L. ; Ding, J. ; Chi, D.Z.; Osipowicz, T. ; Dai, J.Y.; See, A.
621-Jan-2004Ion beam induced charge microscopy studies of power diodesZmeck, M.; Balk, L.J.; Osipowicz, T. ; Watt, F. ; Phang, J.C.H. ; Khambadkone, A.M. ; Niedernostheide, F.-J.; Schulze, H.-J.
7Sep-2003Modeling of deep buried structures in high-power devices based on proton beam induced charge microscopyZmeck, M.; Balk, L.; Osipowicz, T. ; Watt, F. ; Phang, J. ; Khambadkone, A. ; Niedernostheide, F.-J.; Schulze, H.-J.
820-Nov-2002Nickel silicidation on polycrystalline silicon germanium filmsChoi, W.K. ; Pey, K.L. ; Zhao, H.B.; Osipowicz, T. ; Shen, Z.X. 
92007Novel epitaxial nickel aluminide-silicide with low Schottky-Barrier and series resistance for enhanced performance of dopant-segregated source/drain N-channel MuGFETsLee, R.T.P. ; Liow, T.-Y.; Tan, K.-M.; Lim, A.E.-J.; Ho, C.-S.; Hoe, K.-M.; Lai, M.Y.; Osipowicz, T. ; Lo, G.-Q.; Samudra, G. ; Chi, D.-Z.; Yeo, Y.-C. 
102007Orders of magnitude reduction in threading dislocations in ZnO grown on facet-controlled GaNChua, S.J. ; Zhou, H.L.; Pan, H. ; Osipowicz, T. 
112008Performance enhancement schemes featuring lattice mismatched S/D stressors concurrently realized on CMOS platform: e-SiGeSn S/D for pFETs by Sn+ implant and SiC S/D for nFETs by C+ implantWang, G.H.; Toh, E.-H.; Wang, X.; Seng, D.H.L.; Tripathy, S.; Osipowicz, T. ; Tau, K.C.; Samudra, G. ; Yeo, Y.-C. 
122002X-ray diffraction and Raman studies of rf sputtered polycrystalline silicon germanium filmsLeoy, C.C.; Choi, W.K. ; Wong, K.L. ; Wong, K.M. ; Osipowicz, T. ; Rong, J.
132003Yellow luminescence imaging of epitaxial lateral overgrown GaN using ionoluminescenceTeo, E.J. ; Bettiol, A.A. ; Osipowicz, T. ; Hao, M.S.; Chua, S.J. ; Liu, Y.Y.