Full Name
Hou Yong Tian
(not current staff)
Variants
Hou, Yong Tian
Hou, Y.T.
Hou, Y.-T.
Hou, Y.
 
 
 
Email
elehyt@nus.edu.sg
 
Other emails
 

Publications

Refined By:
Author:  Kwong, D.-L.
Author:  Li, M.-F.

Results 1-11 of 11 (Search time: 0.004 seconds).

Issue DateTitleAuthor(s)
1Mar-2004Fermi-Level Pinning Induced Thermal Instability in the Effective Work Function of TaN in TaN/SiO 2 Gate StackRen, C.; Yu, H.Y. ; Kang, J.F. ; Hou, Y.T. ; Li, M.-F. ; Wang, W.D.; Chan, D.S.H. ; Kwong, D.-L.
22003Germanium MOS: An Evaluation from Carrier Quantization and Tunneling CurrentLow, T.; Hou, Y.T. ; Li, M.F. ; Zhu, C. ; Kwong, D.-L.; Chin, A.
3May-2002Hole tunneling current through oxynitride/oxide stack and the stack optimization for p-MOSFETsYu, H.Y. ; Hou, Y.T. ; Li, M.F. ; Kwong, D.-L.
4May-2002Hole tunneling current through oxynitride/oxide stack and the stack optimization for p-MOSFETsYu, H.Y. ; Hou, Y.T. ; Li, M.F. ; Kwong, D.-L.
5Jul-2002Investigation of hole-tunneling current through ultrathin oxynitride/oxide stack gate dielectrics in p-MOSFETsYu, H. ; Hou, Y.-T. ; Li, M.-F. ; Kwong, D.-L.
62003Investigation of Performance Limits of Germanium Double-Gated MOSFETsLow, T.; Hou, Y.T. ; Li, M.F. ; Zhu, C. ; Chin, A.; Samudra, G. ; Chan, L.; Kwong, D.-L.
7Nov-2004Metal gate work function engineering on gate leakage of MOSFETsHou, Y.-T. ; Li, M.-F. ; Low, T.; Kwong, D.-L.
8Feb-2003Modeling of tunneling currents through HfO2 and (HfO2)x(Al2O3)1-x gate stacksHou, Y.T. ; Li, M.F. ; Yu, H.Y. ; Kwong, D.-L.
92002Quantum tunneling and scalability of HfO2 and HfAlO gate stacksHou, Y.T. ; Li, M.F. ; Yu, H.Y. ; Jin, Y.; Kwong, D.-L.
10Feb-2004Robust High-Quality HfN-HfO 2 Gate Stack for Advanced MOS Device ApplicationsYu, H.Y. ; Kang, J.F. ; Ren, C.; Chen, J.D. ; Hou, Y.T. ; Shen, C.; Li, M.F. ; Chan, D.S.H. ; Bera, K.L.; Tung, C.H.; Kwong, D.-L.
112003Thermally Robust High Quality HfN/HfO 2 Gate Stack for Advanced CMOS DevicesYu, H.Y. ; Kang, J.F. ; Chen, J.D. ; Ren, C.; Hou, Y.T. ; Whang, S.J. ; Li, M.-F. ; Chan, D.S.H. ; Bera, K.L.; Tung, C.H.; Du, A.; Kwong, D.-L.