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Hou Yong Tian

rp04419

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Full Name
Hou Yong Tian
(not current staff)
Variants
Hou, Yong Tian
Hou, Y.T.
Hou, Y.-T.
Hou, Y.
 
Main Affiliation
 
Faculty
 
Email
elehyt@nus.edu.sg
 
Other emails
 

Publications

Results 1-20 of 25 (Search time: 0.007 seconds).

Issue DateTitleAuthor(s)
1Dec-2001A simple and efficient model for quantization effects of hole inversion layers in MOS devicesHou, Y.-T. ; Li, M.-F. 
221-Feb-2000An analysis of temperature dependent piezoelectric Franz-Keldysh effect in AlGaNHou, Y.T. ; Teo, K.L. ; Li, M.F. ; Uchida, K.; Tokunaga, H.; Akutsu, N.; Matsumoto, K.
31999Characterization of MBE-grown Ga1-xAlxAs alloy films by Raman scatteringHou, Y.T. ; Feng, Z.C.; Li, M.F. ; Chua, S.J. 
430-May-2000Correlation between the infrared reflectance and microstructure of thin gallium nitride films grown on silicon substratesHou, Y.T. ; Feng, Z.C.; Chen, J.; Zhang, X.; Chua, S.J. ; Lin, J.Y. 
5May-2002Direct tunneling currents through gate dielectrics in deep submicron MOSFETsHou, Y. ; Li, M. ; Jin, Y.
61-Jan-2002Direct tunneling hole currents through ultrathin gate oxides in metal-oxide-semiconductor devicesHou, Y.T. ; Li, M.F. ; Jin, Y.; Lai, W.H.
720-Sep-2004Electron mobility in Ge and strained-Si channel ultrathin-body metal-oxide semi conductor field-effect transistorsLow, T.; Li, M.F. ; Shen, C.; Yeo, Y.-C. ; Hou, Y.T. ; Zhu, C. ; Chin, A.; Kwong, D.L.
8Mar-2004Fermi-Level Pinning Induced Thermal Instability in the Effective Work Function of TaN in TaN/SiO 2 Gate StackRen, C.; Yu, H.Y. ; Kang, J.F. ; Hou, Y.T. ; Li, M.-F. ; Wang, W.D.; Chan, D.S.H. ; Kwong, D.-L.
9Jun-2001Hole quantization effects and threshold voltage shift in pMOSFET - Assessed by improved one-band effective mass approximationHou, Y.T. ; Li, M.-F. 
10May-2003Improved one-band self-consistent effective mass methods for hole quantization in p-MOSFETLow, T.; Hou, Y.-T. ; Li, M.-F. 
11May-2003Improved one-band self-consistent effective mass methods for hole quantization in p-MOSFETLow, T.; Hou, Y.-T. ; Li, M.-F. 
1215-Nov-1999Influence of Si doping on the infrared reflectance characteristics of GaN grown on sapphireHou, Y.T. ; Feng, Z.C.; Chua, S.J. ; Li, M.F. ; Akutsu, N.; Matsumoto, K.
1315-Nov-1999Influence of Si doping on the infrared reflectance characteristics of GaN grown on sapphireHou, Y.T. ; Feng, Z.C.; Chua, S.J. ; Li, M.F. ; Akutsu, N.; Matsumoto, K.
14Nov-1999Infrared reflectance investigation of undoped and Si-doped GaN films on sapphireFeng, Z.C.; Hou, Y.T. ; Li, M.F. ; Chua, S.J. ; Wang, W.; Zhu, L.
15Nov-1999Infrared reflectance investigation of undoped and Si-doped GaN films on sapphireFeng, Z.C.; Hou, Y.T. ; Li, M.F. ; Chua, S.J. ; Wang, W.; Zhu, L.
16Jun-2001Infrared reflectance of GaN films grown on Si(001) substratesZhang, X. ; Hou, Y.-T. ; Feng, Z.-C.; Chen, J.-L.
17Jun-2001Infrared reflectance of GaN films grown on Si(001) substratesZhang, X. ; Hou, Y.-T. ; Feng, Z.-C.; Chen, J.-L.
181999Infrared reflectance studies of GaN epitaxial films on sapphire substrateFeng, Z.C.; Hou, Y.T. ; Chua, S.J. ; Li, M.F. 
19Jul-2002Investigation of hole-tunneling current through ultrathin oxynitride/oxide stack gate dielectrics in p-MOSFETsYu, H. ; Hou, Y.-T. ; Li, M.-F. ; Kwong, D.-L.
20Jan-2004Light Emission Near 1.3 μm Using ITO-Al 2O 3-Si 0.3Ge 0.7-Si Tunnel DiodesLin, C.Y.; Chin, A.; Hou, Y.T. ; Li, M.F. ; McAlister, S.P.; Kwong, D.L.