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Cho Byung-Jin

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Full Name
Cho Byung-Jin
(not current staff)
Variants
Cho, Byung Jin
CHO, BYUNG JIN
Cho, B.
Cho, B.J.
Cho, B.C.
Cho, Byung-Jin
Byung, J.C.
Cho, B.-J.
 
Main Affiliation
 
Faculty
 
Email
elebjcho@nus.edu.sg
 

Publications

Refined By:
Author:  Cho, B.J.
Date Issued:  2000

Results 1-16 of 16 (Search time: 0.004 seconds).

Issue DateTitleAuthor(s)
12000A study of quasi-breakdown mechanism in ultrathin gate oxide under various types of stressGuan, H.; Xu, Z.; Cho, B.J. ; Li, M.F. ; He, Y.D. 
2Aug-2000A thorough study of quasi-breakdown phenomenon of thin gate oxide in dual-gate CMOSFET'sGuan, H.; Li, M.-F. ; He, Y. ; Cho, B.J. ; Dong, Z.
32000Annealing behavior of gate oxide leakage current after quasi-breakdownXu, Z.; Cho, B.J. ; Li, M.F. 
4Dec-2000Annealing of Fowler-Nordheim stress-induced leakage currents in thin silicon dioxide filmsAng, C.H.; Ling, C.H. ; Cheng, Z.Y. ; Kim, S.J. ; Cho, B.J. 
5Oct-2000Comparative study of radiation- and stress-induced leakage currents in thin gate oxidesAng, C.H.; Ling, C.H. ; Cheng, Z.Y. ; Kim, S.J. ; Cho, B.J. 
61-Jul-2000Comparison between leakage currents in thin gate oxides subjected to X-ray radiation and electrical stress degradationCho, B.J. ; Kim, S.J. ; Ling, C.H. ; Joo, M.-S.; Yeo, I.-S.
7Aug-2000Design of LIGBT protection circuit for smart power integrationLuo, J.; Liang, Y.C. ; Cho, B.J. 
82000Does short wavelength lithography process degrade the integrity of thin gate oxide?Kim, S.J. ; Cho, B.J. ; Chong, P.F.; Chor, E.F. ; Ang, C.H.; Ling, C.H. ; Joo, M.S.; Yeo, I.S.
9Dec-2000Electron-beam irradiation-induced gate oxide degradationCho, B.J. ; Chong, P.F.; Chor, E.F. ; Joo, M.S.; Yeo, I.S.
10Mar-2000Hot-carrier degradation mechanism in narrow- and wide-channel n-MOSFET's with recessed LOCOS isolation structureYue, J.M.P.; Chim, W.K. ; Cho, B.J. ; Chan, D.S.H. ; Qin, W.H.; Kim, Y.-B.; Jang, S.-A.; Yeo, I.-S.
112000Investigation of quasi-breakdown mechanism in ultra-thin gate oxidesGuan, H.; He, Y.D. ; Li, M.F. ; Cho, B.J. ; Dong, Z.
122000Investigation of reliability degradation of ultra-thin gate oxides irradiated under electron-beam lithography conditionsChong, P.F.; Cho, B.J. ; Chor, E.F. ; Joo, M.S.; Yeo, I.S.
131-Nov-2000Radiation and electrical stress-induced hole trap-assisted tunneling currents in ultrathin gate oxidesAng, C.-H.; Ling, C.-H. ; Cho, B.-J. ; Kim, S.-J. ; Cheng, Z.-Y. 
141-Nov-2000Radiation and electrical stress-induced hole trap-assisted tunneling currents in ultrathin gate oxidesAng, C.-H.; Ling, C.-H. ; Cho, B.-J. ; Kim, S.-J. ; Cheng, Z.-Y. 
152000Reduction of radiation-induced leakage currents in thin oxides by application of a low post-irradiation gate biasAng, Chew-Hoe; Ling, Chung-Ho ; Cheng, Zhi-Yuan ; Kim, Sun-Jung ; Cho, Byung-Jin 
162000Roles of primary hot hole and FN electron fluences in gate oxide breakdownLi, M.F. ; He, Y.D. ; Ma, S.G.; Cho, B.J. ; Lo, K.F.