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Eng Fong Chor

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Full Name
Eng Fong Chor
Variants
Chor, E.F.
CHOR, ENG FONG
Chor, E.-F.
Eng, F.C.
Chor, Eng Fong
 
Main Affiliation
 
Faculty
 
Email
elecef@nus.edu.sg
 
Other emails
 

Publications

Results 41-60 of 90 (Search time: 0.012 seconds).

Issue DateTitleAuthor(s)
4120-Mar-2002ICP etching of RF sputtered and PECVD silicon carbide filmsShi, J. ; Chor, E.F. ; Choi, W.K. 
422010Impact of Al2O3 incorporation on device performance of HfO2 gate dielectric AlGaN/GaN MIS-HFETsTian, F.; Chor, E.F. 
43Aug-2002Impact of indium and boron interaction on device performance for short and narrow channel n-metal oxide semiconductor field effect transistorsOng, S.Y.; Chor, E.F. ; Lee, J.; See, A.; Chan, L.
4426-Mar-2007Improved DC performance of AlGaN/GaN high electron mobility transistors using hafnium oxide for surface passivationLiu, C.; Chor, E.F. ; Tan, L.S. 
52010Improved electrical performance and thermal stability of HfO2 / Al2 O3 bilayer over HfO2 gate dielectric AlGaN/GaN MIS-HFETsTian, F.; Chor, E.F. 
62000Improved PECVD pre-metal oxide liner deposition process with low residual charge non-uniformity in film to avoid excessive PIDCha, C.L.; Vassiliev, V.; Chor, E.F. ; See, A.K. 
72014Influence of RuOx Gate Thermal Annealing on Electrical Characteristics of AlxGa1-xN/GaN HEMTs on 200-mm SiliconKyaw, L.M.; Dolmanan, S.B.; Bera, M.K.; Liu, Y.; Tan, H.R.; Bhat, T.N.; Dikme, Y.; Chor, E.F. ; Tripathy, S.
817-Nov-2003Influence of substitutional carbon incorporation on implanted-indium-related defects and transient enhanced diffusionTan, C.F.; Chor, E.F. ; Liu, J.; Lee, H.; Quek, E.; Chan, L.
92009Integration of Al segregated NiSiGe/SiGe source/drain contact technology in p-FinFETs for drive current enhancementSinha, M.; Lee, R.T.P. ; Devi, S.N.; Lo, G.-Q.; Chor, E.F. ; Yeo, Y.-C. 
10Nov-2002Investigation of active Si pitting and its impact on 0.15 and 0.30 μm n-type metal-oxide-semiconductor and p-type metal-oxide-semiconductor transistorsChua, C.S.; Chor, E.F. ; Goh, F.; See, A.; Chan, L.
11Nov-2002Investigation of active Si pitting and its impact on 0.15 and 0.30 μm n-type metal-oxide-semiconductor and p-type metal-oxide-semiconductor transistorsChua, C.S.; Chor, E.F. ; Goh, F.; See, A.; Chan, L.
122000Investigation of reliability degradation of ultra-thin gate oxides irradiated under electron-beam lithography conditionsChong, P.F.; Cho, B.J. ; Chor, E.F. ; Joo, M.S.; Yeo, I.S.
13Jul-2009Investigation of Rh-based Schottky electrode on AlGaN/GaN heterostructureTian, F.; Chor, E.F. 
142006Investigations of HfO2 AlGaNGaN metal-oxide-semiconductor high electron mobility transistorsLiu, C.; Chor, E.F. ; Tan, L.S. 
152010Investigations of niobium carbide contact for carbon-nanotube-based devicesHuang, L. ; Chor, E.F. ; Wu, Y. ; Guo, Z.
16Apr-2005Leakage suppression of gated diodes fabricated under low-temperature annealing with substitutional carbon Si1-yCy incorporationTan, C.F.; Chor, E.F. ; Lee, H.; Liu, J.; Quek, E.; Chan, L.
17Feb-1996Metallurgical stability of ohmic contacts on thin base InP/InGaAs/InP HBT'sChor, E.F. ; Malik, R.J.; Hamm, R.A.; Ryan, R.
1816-May-2000Method and apparatus to image metallic patches embedded in a non-metal surfaceCHA, CHER LIANG RANDALL; GONG, HAO ; CHOR, ENG FONG ; CHAN, LAP
19Sep-2010Nickel-silicide contact technology with dual near-band-edge barrier heights and integration in CMOS FinFETs with single maskSinha, M.; Chor, E.F. ; Yeo, Y.-C. 
20Dec-1991Numerical study of the dependence of unity gain bandwidth fT on polysilicon emitter in bipolar transistorsChor, E.F. ; Tan, I.S.