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https://doi.org/10.1149/2.008402ssl
Title: | Influence of RuOx Gate Thermal Annealing on Electrical Characteristics of AlxGa1-xN/GaN HEMTs on 200-mm Silicon | Authors: | Kyaw, L.M. Dolmanan, S.B. Bera, M.K. Liu, Y. Tan, H.R. Bhat, T.N. Dikme, Y. Chor, E.F. Tripathy, S. |
Issue Date: | 2014 | Citation: | Kyaw, L.M., Dolmanan, S.B., Bera, M.K., Liu, Y., Tan, H.R., Bhat, T.N., Dikme, Y., Chor, E.F., Tripathy, S. (2014). Influence of RuOx Gate Thermal Annealing on Electrical Characteristics of AlxGa1-xN/GaN HEMTs on 200-mm Silicon. ECS Solid State Letters 3 (2) : Q5-Q8. ScholarBank@NUS Repository. https://doi.org/10.1149/2.008402ssl | Abstract: | This letter reports the electrical characteristics of 1.5 μm RuO x-gate AlxGa1-xN/GaN high electron mobility transistors (HEMTs) on a 200-mm diameter Si(111) substrate subjected to gate annealing in the temperature range of 600 - 900°C. The electrical characteristics of HEMTs do not change significantly up to an annealing temperature of 800°C. The maximum gm and IDSAT are 0.197 S/mm and 0.55 A/mm, respectively, when annealed at 700°C. The ON-OFF current ratio of > 107 and a sub-threshold swing of 90 mV/decade in HEMTs annealed up to 800°C showcase the crystalline quality of AlxGa 1-xN/GaN HEMT structure with good electrical contacts.©2013 The Electrochemical Society. | Source Title: | ECS Solid State Letters | URI: | http://scholarbank.nus.edu.sg/handle/10635/82537 | ISSN: | 21628742 | DOI: | 10.1149/2.008402ssl |
Appears in Collections: | Staff Publications |
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