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https://doi.org/10.1109/55.484124
| Title: | Metallurgical stability of ohmic contacts on thin base InP/InGaAs/InP HBT's | Authors: | Chor, E.F. Malik, R.J. Hamm, R.A. Ryan, R. |
Issue Date: | Feb-1996 | Citation: | Chor, E.F., Malik, R.J., Hamm, R.A., Ryan, R. (1996-02). Metallurgical stability of ohmic contacts on thin base InP/InGaAs/InP HBT's. IEEE Electron Device Letters 17 (2) : 62-64. ScholarBank@NUS Repository. https://doi.org/10.1109/55.484124 | Abstract: | The metallurgical stability of ohmic contacts: Pt, Pt/Ti, Au/Ti, Au/Pt/Ti, and Au/Pt/Ti/W, on a 500 Å thick p+-InGaAs base of InP/InGaAs/InP HBT's have been investigated as a function of anneal temperature. All contacts were stable after a 300°C-30 s anneal. Pt contact failed at 350°C whereas Pt/Ti, Au/Ti, and Au/Pt/Ti contacts failed at 400°C. The failure mechanism was a collector leakage short owing to the penetration of Pt or Ti through the thin base. Only HBT's with Au/Pt/Ti/W contact were still functional after a 400°C anneal with no apparent shift in the turn-on voltage for the emitter and collector junctions. | Source Title: | IEEE Electron Device Letters | URI: | http://scholarbank.nus.edu.sg/handle/10635/80711 | ISSN: | 07413106 | DOI: | 10.1109/55.484124 |
| Appears in Collections: | Staff Publications |
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