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https://doi.org/10.1109/55.484124
DC Field | Value | |
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dc.title | Metallurgical stability of ohmic contacts on thin base InP/InGaAs/InP HBT's | |
dc.contributor.author | Chor, E.F. | |
dc.contributor.author | Malik, R.J. | |
dc.contributor.author | Hamm, R.A. | |
dc.contributor.author | Ryan, R. | |
dc.date.accessioned | 2014-10-07T03:00:29Z | |
dc.date.available | 2014-10-07T03:00:29Z | |
dc.date.issued | 1996-02 | |
dc.identifier.citation | Chor, E.F., Malik, R.J., Hamm, R.A., Ryan, R. (1996-02). Metallurgical stability of ohmic contacts on thin base InP/InGaAs/InP HBT's. IEEE Electron Device Letters 17 (2) : 62-64. ScholarBank@NUS Repository. https://doi.org/10.1109/55.484124 | |
dc.identifier.issn | 07413106 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/80711 | |
dc.description.abstract | The metallurgical stability of ohmic contacts: Pt, Pt/Ti, Au/Ti, Au/Pt/Ti, and Au/Pt/Ti/W, on a 500 Å thick p+-InGaAs base of InP/InGaAs/InP HBT's have been investigated as a function of anneal temperature. All contacts were stable after a 300°C-30 s anneal. Pt contact failed at 350°C whereas Pt/Ti, Au/Ti, and Au/Pt/Ti contacts failed at 400°C. The failure mechanism was a collector leakage short owing to the penetration of Pt or Ti through the thin base. Only HBT's with Au/Pt/Ti/W contact were still functional after a 400°C anneal with no apparent shift in the turn-on voltage for the emitter and collector junctions. | |
dc.description.uri | http://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/55.484124 | |
dc.source | Scopus | |
dc.type | Article | |
dc.contributor.department | ELECTRICAL ENGINEERING | |
dc.description.doi | 10.1109/55.484124 | |
dc.description.sourcetitle | IEEE Electron Device Letters | |
dc.description.volume | 17 | |
dc.description.issue | 2 | |
dc.description.page | 62-64 | |
dc.description.coden | EDLED | |
dc.identifier.isiut | A1996TU25200009 | |
Appears in Collections: | Staff Publications |
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