Please use this identifier to cite or link to this item: https://doi.org/10.1109/55.484124
DC FieldValue
dc.titleMetallurgical stability of ohmic contacts on thin base InP/InGaAs/InP HBT's
dc.contributor.authorChor, E.F.
dc.contributor.authorMalik, R.J.
dc.contributor.authorHamm, R.A.
dc.contributor.authorRyan, R.
dc.date.accessioned2014-10-07T03:00:29Z
dc.date.available2014-10-07T03:00:29Z
dc.date.issued1996-02
dc.identifier.citationChor, E.F., Malik, R.J., Hamm, R.A., Ryan, R. (1996-02). Metallurgical stability of ohmic contacts on thin base InP/InGaAs/InP HBT's. IEEE Electron Device Letters 17 (2) : 62-64. ScholarBank@NUS Repository. https://doi.org/10.1109/55.484124
dc.identifier.issn07413106
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/80711
dc.description.abstractThe metallurgical stability of ohmic contacts: Pt, Pt/Ti, Au/Ti, Au/Pt/Ti, and Au/Pt/Ti/W, on a 500 Å thick p+-InGaAs base of InP/InGaAs/InP HBT's have been investigated as a function of anneal temperature. All contacts were stable after a 300°C-30 s anneal. Pt contact failed at 350°C whereas Pt/Ti, Au/Ti, and Au/Pt/Ti contacts failed at 400°C. The failure mechanism was a collector leakage short owing to the penetration of Pt or Ti through the thin base. Only HBT's with Au/Pt/Ti/W contact were still functional after a 400°C anneal with no apparent shift in the turn-on voltage for the emitter and collector junctions.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/55.484124
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL ENGINEERING
dc.description.doi10.1109/55.484124
dc.description.sourcetitleIEEE Electron Device Letters
dc.description.volume17
dc.description.issue2
dc.description.page62-64
dc.description.codenEDLED
dc.identifier.isiutA1996TU25200009
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