Metallurgical stability of ohmic contacts on thin base InP/InGaAs/InP HBT's

Please use this identifier to cite or link to this item: https://doi.org/10.1109/55.484124

Title:	Metallurgical stability of ohmic contacts on thin base InP/InGaAs/InP HBT's
Authors:	Chor, E.F. Malik, R.J. Hamm, R.A. Ryan, R.
Issue Date:	Feb-1996
Citation:	Chor, E.F., Malik, R.J., Hamm, R.A., Ryan, R. (1996-02). Metallurgical stability of ohmic contacts on thin base InP/InGaAs/InP HBT's. IEEE Electron Device Letters 17 (2) : 62-64. ScholarBank@NUS Repository. https://doi.org/10.1109/55.484124
Abstract:	The metallurgical stability of ohmic contacts: Pt, Pt/Ti, Au/Ti, Au/Pt/Ti, and Au/Pt/Ti/W, on a 500 Å thick p+-InGaAs base of InP/InGaAs/InP HBT's have been investigated as a function of anneal temperature. All contacts were stable after a 300°C-30 s anneal. Pt contact failed at 350°C whereas Pt/Ti, Au/Ti, and Au/Pt/Ti contacts failed at 400°C. The failure mechanism was a collector leakage short owing to the penetration of Pt or Ti through the thin base. Only HBT's with Au/Pt/Ti/W contact were still functional after a 400°C anneal with no apparent shift in the turn-on voltage for the emitter and collector junctions.
Source Title:	IEEE Electron Device Letters
URI:	http://scholarbank.nus.edu.sg/handle/10635/80711
ISSN:	07413106
DOI:	10.1109/55.484124
Appears in Collections:	Staff Publications

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