Please use this identifier to cite or link to this item:
Title: Improved electrical performance and thermal stability of HfO2 / Al2 O3 bilayer over HfO2 gate dielectric AlGaN/GaN MIS-HFETs
Authors: Tian, F.
Chor, E.F. 
Issue Date: 2010
Citation: Tian, F., Chor, E.F. (2010). Improved electrical performance and thermal stability of HfO2 / Al2 O3 bilayer over HfO2 gate dielectric AlGaN/GaN MIS-HFETs. Journal of the Electrochemical Society 157 (5) : H557-H561. ScholarBank@NUS Repository.
Abstract: AlGaN/GaN metal-insulator-semiconductor heterostructure field-effect transistors (MIS-HFETs) with a HfO2 / Al2 O3 bilayer gate dielectric have been fabricated, characterized, and compared with HfO2 gate dielectric MIS-HFETs. Physical and electrical characterizations have revealed the enhanced properties of the HfO2 / Al2 O3 bilayer dielectric over that of the single HfO2 layer. As a result, the fabricated HfO2 / Al 2 O3 MIS-HFETs exhibit better electrical performance and thermal stability than the HfO2 transistors. The maximum drain current of the HfO2 / Al2 O3 MIS-HFETs has increased by ∼8.5%, while the off-state drain current has reduced by nearly 1 order of magnitude than that of the HfO2 MIS-HFETs. After the thermal stress at elevated temperatures (400 and 500°C) for a prolonged duration up to 500 min, the irreversible device performance degradation, including drain current, peak transconductance, threshold voltage, and gate leakage current for the HfO2 / Al2 O3 MIS-HFETs, is substantially less than that for the HfO2 MIS-HFETs. A longer lifetime of ∼4× 106 h at 150°C has also been estimated for the former, compared to that of the latter of ∼2× 105 h. © 2010 The Electrochemical Society.
Source Title: Journal of the Electrochemical Society
ISSN: 00134651
DOI: 10.1149/1.3353799
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.


checked on Jan 19, 2022


checked on Jan 12, 2022

Page view(s)

checked on Jan 20, 2022

Google ScholarTM



Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.