Investigation of active Si pitting and its impact on 0.15 and 0.30 μm n-type metal-oxide-semiconductor and p-type metal-oxide-semiconductor transistors

Please use this identifier to cite or link to this item: https://doi.org/10.1116/1.1518972

Title:	Investigation of active Si pitting and its impact on 0.15 and 0.30 μm n-type metal-oxide-semiconductor and p-type metal-oxide-semiconductor transistors
Authors:	Chua, C.S. Chor, E.F. Goh, F. See, A. Chan, L.
Issue Date:	Nov-2002
Citation:	Chua, C.S., Chor, E.F., Goh, F., See, A., Chan, L. (2002-11). Investigation of active Si pitting and its impact on 0.15 and 0.30 μm n-type metal-oxide-semiconductor and p-type metal-oxide-semiconductor transistors. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 20 (6) : 2288-2294. ScholarBank@NUS Repository. https://doi.org/10.1116/1.1518972
Abstract:	The root causes of active pitting in a dual-doped gate MOSFET process were studied. These include the etch chamber configuration, the etch chemistry used, and the etch rate variation due to pattern density and different dopant species in the polysilicon gates. It was observed that pitting can lead to degradation of device characteristics, such as drive current, series resistance, and transconductance.
Source Title:	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
URI:	http://scholarbank.nus.edu.sg/handle/10635/56396
ISSN:	0734211X
DOI:	10.1116/1.1518972
Appears in Collections:	Staff Publications

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