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Eng Fong Chor

rp04127

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Full Name
Eng Fong Chor
Variants
Chor, E.F.
CHOR, ENG FONG
Chor, E.-F.
Eng, F.C.
Chor, Eng Fong
 
Main Affiliation
 
Faculty
 
Email
elecef@nus.edu.sg
 
Other emails
 

Publications

Refined By:
Date Issued:  [1950 TO 1999]

Results 1-20 of 20 (Search time: 0.004 seconds).

Issue DateTitleAuthor(s)
11-Sep-1998Alternative (Pd,Ti,Au) contacts to (Pt,Ti,Au) contacts for In0.53Ga0.47AsChor, E.F. ; Chong, W.K.; Heng, C.H. 
2Apr-1993Analytical and numerical studies of the dependence of high frequency performance on the use of a polysilicon emitter in bipolar transistorsChor, E.F. ; Tan, L.S. 
31998Application of a negative sweep voltage to control gate of fresh flash memory devices to facilitate threshold voltage test measurementCha, C.L.; Chor, E.F. ; Gong, H. ; Teo, T.H.; Zhang, A.Q.; Chan, L.
41997Breakdown of reoxidized nitrided oxide (ONO) in Flash memory devices upon current stressingCha, C.L.; Chor, E.F. ; Gong, H. ; Zhang, A.Q.; Chan, L.
518-Jul-1996Composite step-graded collector of InP/InGaAs/lnP DHBT for minimised carrier blockingChor, E.F. ; Peng, C.J. 
6Dec-1993Compound emitter heterojunction bipolar transistorChor, E.F. ; Peng, C.J. 
71997Constant current-stress induced breakdown of reoxidized nitrided oxide (ONO) in Flash memory devicesCha, C.L.; Chor, E.F. ; Gong, H. ; Zhang, A.Q.; Chan, L.; Xie, J.
81997Effects of constant current-stressing on reoxidized nitrided oxide (ONO) in flash memory devicesCha, C.L.; Chor, E.F. ; Gong, H. ; Zhang, A.Q.; Chan, L.; Xie, J.
91999Enhancement of hot-carrier injection resistance for deep submicron transistor gate dielectric with a powered solenoidCha, C.-L.; Tee, K.-C.; Chor, E.-F. ; Gong, H. ; Prasad, K.; Bourdillon, A.J. ; See, A. ; Chan, L.; Lee, M.M.-O.
101999Evaluation of rapid thermal nitrided ONO interpoly dielectric resistance to plasma process-induced damageCha, C.L.; Chor, E.F. ; Gong, H. ; Zhang, A.Q.; Dong, Z.; Chan, L.
111-Sep-1999Evaluation of silicon nitride and silicon carbide as efficient polysilicon grain-growth inhibitorsCha, C.L.; Chor, E.F. ; Jia, Y.M.; Bourdillon, A.J. ; Gong, H. ; Pan, J.S.; Zhang, A.Q.; Tang, S.K.; Boothroyd, C.B.
121998Evaluation of the dielectric breakdown of reoxidized nitrided oxide (ONO) in flash memory devices using constant current-stressing techniqueCha, C.L.; Chor, E.F. ; Gong, H. ; Zhang, A.Q.; Chan, L.; Xie, J.
13Nov-1997Heterojunction bipolar transistor with an additional minority carrier reflection barrier in the emitterChor, E.F. ; Peng, C.J. 
14Nov-1997Heterojunction bipolar transistor with an additional minority carrier reflection barrier in the emitterChor, E.F. ; Peng, C.J. 
15Feb-1996Metallurgical stability of ohmic contacts on thin base InP/InGaAs/InP HBT'sChor, E.F. ; Malik, R.J.; Hamm, R.A.; Ryan, R.
16Dec-1991Numerical study of the dependence of unity gain bandwidth fT on polysilicon emitter in bipolar transistorsChor, E.F. ; Tan, I.S.
171-Aug-1992Strong low-frequency noise in polysilicon emitter bipolar transistors with interfacial oxide due to fluctuations in tunneling probabilitiesLau, Wai Shing ; Chor, Eng Fong ; Foo, Chee Seng; Khoong, Wai Chee
1819-Jul-1999Surface smoothing of floating gates in flash memory devices via surface nitrogen and carbon incorporationCha, C.-L.; Chor, E.-F. ; Gong, H. ; Bourdillon, A.J. ; Jia, Y.-M.; Pan, J.-S. ; Zhang, A.-Q.; Chan, L.
19Jun-1997The development of a highly selective KI/I2/H2O/H2SO4 etchant for the selective etching of Al0.3Ga0.7As over GaAsLau, W.S. ; Chor, E.F. ; Kek, S.P.; Abdul Aziz, W.H.B.; Lim, H.C.; Heng, C.H. ; Zhao, R.
201998Threshold voltage instabilities of fresh flash memory devices caused by plasma chargingCha, C.L.; Chor, E.F. ; Gong, H. ; Teo, T.H.; Zhang, A.Q.; Chan, L.