1. ScholarBank@NUS

Thye Shen, Andrew Wee

rp02822

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Full Name
Thye Shen, Andrew Wee
Variants
Wee, A.T.
Wee, A.T.S.
Wee A.T.S.
Thye Shen Wee, A.
Wee, A.T.S
Thye-Shen Wee, A.
Wee A.T.S
Wee, S.
Wee, A.T.-S.
Wee, A.T.A.
WEE, ANDREW THYE SHEN
Wee, T.S.
Wee, A.
Wee, Andrew T.S.
Wee, T.S.A.
Wee Thye Shen, Andrew
 
Main Affiliation
 
Faculty
 
Email
phyweets@nus.edu.sg
 

Publications

Results 21-40 of 551 (Search time: 0.006 seconds).

Issue DateTitleAuthor(s)
2120-Oct-2001Annealing effects of tantalum thin films sputtered on [001] silicon substrateLiu, L. ; Gong, H. ; Wang, Y. ; Wang, J. ; Wee, A.T.S ; Liu, R. 
2229-May-2000Annealing of ultrashallow p+/n junction by 248 nm excimer laser and rapid thermal processing with different preamorphization depthsChong, Y.F.; Pey, K.L. ; Wee, A.T.S. ; See, A.; Chan, L.; Lu, Y.F.; Song, W.D.; Chua, L.H.
23Nov-2012Anomalous scaling behaviour of cobalt cluster size distributions on graphite, epitaxial graphene and carbon-rich (6√3 × 6√3)R30°Poon, S.W. ; Wee, A.T.S. ; Tok, E.S. 
242000Application of excimer laser annealing in the formation of ultra-shallow p+/n junctionsChong, Y.F.; Pey, K.L. ; Wee, A.T.S. ; See, A. ; Tung, C.-H. ; Gopalakrishnan, R. ; Lu, Y.F. 
2515-Mar-1996Argon incorporation and silicon carbide formation during low energy argon-ion bombardment of Si(100)Pan, J.S. ; Wee, A.T.S. ; Huan, C.H.A. ; Tan, H.S. ; Tan, K.L. 
2615-Dec-1996Argon incorporation and surface compositional changes in InP(100) due to low-energy Ar+ ion bombardmentPan, J.S. ; Wee, A.T.S. ; Huan, C.H.A. ; Tan, H.S. ; Tan, K.L. 
2721-Sep-1997ARXPS analysis of surface compositional change in Ar+ ion bombarded GaAs (100)Pan, J.S. ; Wee, A.T.S. ; Huan, C.H.A. ; Tan, H.S. ; Tan, K.L. 
28Nov-1998Atomic force microscopy investigation of the O2 +-induced surface topography of InPPan, J.S. ; Tay, S.T.; Huan, C.H.A. ; Wee, A.T.S. 
29Jan-2005Atomic force microscopy study of hexagonal boron nitride film growth on 6H-SiC (0001)Chen, W. ; Loh, K.P. ; Lin, M.; Liu, R. ; Wee, A.T.S. 
3023-Oct-2003Atomic scale oxidation of silicon nanoclusters on silicon carbide surfacesChen, W. ; Xie, X.N. ; Xu, H. ; Wee, A.T.S. ; Loh, K.P. 
3110-Dec-2005Atomic structure of the 6H-SiC(0 0 0 1) nanomeshChen, W. ; Xu, H. ; Liu, L. ; Gao, X. ; Qi, D. ; Peng, G. ; Tan, S.C. ; Feng, Y. ; Loh, K.P. ; Wee, A.T.S. 
32Apr-2004Atomic-scale structure of the fivefold surface of an AlPdMn quasicrystal: A quantitative x-ray photoelectron diffraction analysisZheng, J.-C. ; Huan, C.H.A. ; Wee, A.T.S. ; Van Hove, M.A.; Fadley, C.S.; Shi, F.J.; Rotenberg, E.; Barman, S.R.; Paggel, J.J.; Horn, K.; Ebert, Ph.; Urban, K.
33Jul-1998Auger electron spectroscopy and x-ray photoelectron spectroscopy analysis of angle of incidence effects of ion beam nitridation of GaAsPan, J.S. ; Huan, C.H.A. ; Wee, A.T.S. ; Tan, H.S. ; Tan, K.L. 
342013Band gap tunable N-type molecules for organic field effect transistorsGlowatzki, H.; Sonar, P.; Singh, S.P.; Mak, A.M.; Sullivan, M.B.; Chen, W. ; Wee, A.T.S. ; Dodabalapur, A.
352010Band-bending at the graphene-sic interfaces: Effect of the substrateChen, W. ; Chen, S. ; Ni, Z.H.; Huang, H. ; Qi, D.C. ; Gao, X.Y. ; Shen, Z.X.; Wee, A.T.S. 
3617-Sep-2008Band-like transport in surface-functionalized highly solution-processable graphene nanosheetsWang, S. ; Chia, P.-J. ; Chua, L.-L. ; Zhao, L.-H.; Png, R.-Q. ; Sivaramakrishnan, S. ; Zhou, M. ; Goh, R.G.-S. ; Friend, R.H. ; Wee, A.T.-S. ; Ho, P.K.-H. 
3717-Feb-2015Bandgap tunability at single-layer molybdenum disulphide grain boundariesHuang, Yu Li ; Chen, Yifeng ; Zhang, Wenjing ; Quek, Su Ying ; Chen, Chang-Hsiao; Li, Lain-Jong; Hsu, Wei-Ting; Chang, Wen-Hao; Zheng, Yu Jie; Chen, Wei ; Wee, Andrew TS 
381-Apr-2007BEEM studies on metal high K-dielectric HfO2 interfacesZheng, Y. ; Troadec, C.; Wee, A.T.S. ; Pey, K.L.; O'Shea, S.J.; Chandrasekhar, N. 
399-Jul-2012Bonding and diffusion of nitrogen in the InSbN alloys fabricated by two-step ion implantationWang, Y.; Zhang, D.H.; Chen, X.Z.; Jin, Y.J.; Li, J.H.; Liu, C.J. ; Wee, A.T.S. ; Zhang, S.; Ramam, A.
4023-Dec-2008Bottom-up growth of epitaxial graphene on 6H-SiC(0001)Huang, H. ; Chen, W. ; Chen, S. ; Wee, A.T.S.