Full Name
Fen Lin
Variants
Lin, Fen
Lin, F.
 
 
 
Email
serlf@nus.edu.sg
 

Publications

Refined By:
Date Issued:  [2000 TO 3000]

Results 1-20 of 49 (Search time: 0.012 seconds).

Issue DateTitleAuthor(s)
11-Oct-2017A modeling framework for optimizing current density in four-terminal tandem solar cells: A case study on GaAs/Si tandemLIU ZHE ; REN ZEKUN ; LIU HAOHUI ; NASIM SAHRAEI KHANGHAH ; LIN FEN ; ROLF ARNOLD STANGL ; ABERLE,ARMIN GERHARD ; Buonassisi, T; IAN MARIUS PETERS 
22008Absorption recovery time reduction in InGaN/GaN quantum well saturable absorbersLin, F. ; Xiang, N. ; Chua, S.J. ; Irshad, A.; Roither, S.; Pugzlys, A.; Baltuska, A.; Chen, P.; Chow, S.Y.
32015Accurate extraction of the series resistance of aluminum local back surface field silicon wafer solar cellsChen, Jia; Du, Zheren ; Ma, Fajun ; Lin, Fen ; Sarangi, Debajyoti ; Hoex, Bram ; Aberle, Armin Gerhard 
42012Aluminum local back surface field solar cells with inkjet-opened rear dielectric filmsLiu, L.; Du, Z.; Lin, F. ; Hoex, B. ; Aberle, A.G. 
512-Nov-2021Amorphous CdO-In2O3Electrode for Perovskite-Based Bifacial and Tandem Photovoltaic Technologies with High Energy ProductionCheng, Yuanhang ; Zeng, Zixin; LIU TIANYUAN ; Wang, Ying; Rodríguez-Gallegos, Carlos D; LIU HAOHUI ; Liu, Xixia; Thway, Maung; Khup, David; Khaing, Aung Myint; Yu, Kin Man; Tsang, Sai-Wing; Lin, F. 
6Aug-2021An ab-initio investigation of mechanical and thermodynamic properties of Ag2MgSn(S/Se)4 in kesterite and stannite phasesSrivastava, A; Tripathy, SK; Lenka, TR; Menon, PS; Lin, F ; Aberle, AG 
72022Analytical Review of Spiro‐OMeTAD Hole Transport Materials: Paths Toward Stable and Efficient Perovskite Solar CellsNakka, Laxmi; Cheng, Yuanhang ; Aberle, Armin Gerhard ; Lin, Fen 
8Mar-2023Application of an amphipathic molecule at the NiO /perovskite interface for improving the efficiency and long-term stability of the inverted perovskite solar cellsShen, Guibin; Dong, Hongye; Yang, Fan; Ren Ng, Xin ; Li, Xin; Lin, Fen ; Mu, Cheng
91-Dec-2020Author Correction: Embedding physics domain knowledge into a Bayesian network enables layer-by-layer process innovation for photovoltaics (npj Computational Materials, (2020), 6, 1, (9), 10.1038/s41524-020-0277-x)Ren, Z ; Oviedo, F; Thway, M ; Tian, SIP; Wang, Y ; Xue, H ; Perea, JD; Layurova, M; Heumueller, T; Birgersson, E ; Aberle, AG ; Brabec, CJ; Stangl, R ; Li, Q ; Sun, S; Lin, F ; Peters, IM ; Buonassisi, T
102008Demonstration and control of the fast-absorption recovery times of the InGaN/GaN quantum well saturable absorbersLin, F. ; Xiang, N. ; Chen, P.; Chua, S.J. ; Irshad, A.; Roither, S.; Pugzlys, A.; Baltuska, A.
112006Design and optimization of GaN-based semiconductor saturable absorber mirror operating at around 415 nmLin, F. ; Xiang, N. ; Wang, X.C.; Arokiaraj, J.; Liu, W.; Liu, H.F. ; Chua, S.J. 
121-Jul-2018Developing a Robust Recombination Contact to Realize Monolithic Perovskite Tandems With Industrially Common p-Type Silicon Solar CellsHoye, Robert LZ; Bush, Kevin A; Oviedo, Felipe; Sofia, Sarah E; MAUNG THWAY ; LI XINHANG ; LIU ZHE ; Jean, Joel; Mailoa, Jonathan P; Osherov, Anna; LIN FEN ; Palmstrom, Axel F; Bulovic, Vladimir; McGehee, Michael D; IAN MARIUS PETERS ; Buonassisi, Tonio
1323-Nov-2021Device Simulation of Ag 2 SrSnS 4 and Ag 2 SrSnSe 4 Based Thin‐Film Solar Cells from ScratchSrivastava, Ashutosh; Tripathy, Susanta Kumar; Lenka, Trupti Ranjan; Hvizdos, Pavol; Menon, P Susthitha; Lin, Fen ; Aberle, Armin Gerhard 
1428-Dec-2022Effects of Overnight Oxidation on Perovskite Solar Cells with Co(III)TFSI Co-Doped Spiro-OMeTADNakka, Laxmi; Aberle, Armin Gerhard ; Lin, Fen 
1531-Jan-2020Embedding physics domain knowledge into a Bayesian network enables layer-by-layer process innovation for photovoltaicsRen, Z. ; Oviedo, F.; Thway, M. ; Tian, S.I.P.; Wang, Y.; Xue, H. ; Dario Perea, J.; Layurova, M.; Heumueller, T.; Birgersson, E. ; Aberle, A.G. ; Brabec, C.J.; Stangl, R. ; Li, Q. ; Sun, S.; Lin, F. ; Peters, I.M.; Buonassisi, T.
16Jun-2013Excellent boron emitter passivation for high-efficiency Si wafer solar cells using AlOx/SiNx dielectric stacks deposited in an industrial inline plasma reactorDuttagupta, S.; Lin, F. ; Shetty, K.D.; Aberle, A.G. ; Hoex, B. 
1725-Sep-2013Excellent c-Si surface passivation by thermal atomic layer deposited aluminum oxide after industrial firing activationLiao, B.; Stangl, R.; Ma, F. ; Mueller, T.; Lin, F. ; Aberle, A.G. ; Bhatia, C.S. ; Hoex, B. 
18Oct-2012Excellent passivation of p + silicon surfaces by inline plasma enhanced chemical vapor deposited SiO x/AlO x stacksLin, F. ; Duttagupta, S.; Shetty, K.D.; Boreland, M.; Aberle, A.G. ; Hoex, B. 
19May-2021First Principle Study on Structural and Optoelectronic Properties and Band-gap Modulation in Germanium Incorporated Tin (IV) OxideMazumder, Julaiba Tahsina; Lenka, TR; Zunic, Milan; Brankovic, Zorica; Tripathy, SK; Menon, PS; Lin, F ; Aberle, AG 
202020Four-Terminal Perovskite on Silicon Tandem Solar Cells Optimal Measurement SchemesDewi, HA; Wang, H; Li, J; Thway, M ; Lin, F ; Aberle, AG ; Mathews, N; Mhaisalkar, S; Bruno, A