Full Name
XIANG NING
Variants
Xiang, Ning
Xiang, N.
Ning, X.
 
 
 
Email
elexn@nus.edu.sg
 

Publications

Results 1-20 of 47 (Search time: 0.012 seconds).

Issue DateTitleAuthor(s)
12008Absorption recovery time reduction in InGaN/GaN quantum well saturable absorbersLin, F. ; Xiang, N. ; Chua, S.J. ; Irshad, A.; Roither, S.; Pugzlys, A.; Baltuska, A.; Chen, P.; Chow, S.Y.
27-Jun-2008Analysing the thermal-annealing-induced photoluminescence blueshifts for GaInNAs/GaAs quantum wells: A genetic algorithm based approachDixit, V.; Liu, H.F.; Xiang, N. 
32006Anneal-induced interdiffusion in 1.3-μm GaInNAs/GaAs quantum well structures grown by molecular-beam epitaxyLiu, H.F. ; Dixit, V.; Xiang, N. 
4Apr-2007Anneal-induced structural changes of GaIn(N)As/Ga(N)As multiple quantum wells grown by molecular beam epitaxyLiu, H.F. ; Xiang, N. ; Zhou, H.L.; Chua, S.J.; Yang, P. ; Moser, H.O. 
515-Apr-2006Annealing behavior of N-bonding configurations in GaN 0.023As0.977 ternary alloy grown on GaAs (0 0 1) substrate by molecular beam epitaxyLiu, H.F. ; Xiang, N. ; Chua, S.J.
62007Annealing effects on electrical and optical properties of ZnO thin-film samples deposited by radio frequency-magnetron sputtering on GaAs (001) substratesLiu, H.F.; Chua, S.J.; Hu, G.X. ; Gong, H. ; Xiang, N. 
718-Aug-2008Coherent energy exchange between components of a vector sgliton in fiber lasersZhang, H.; Tang, D.Y.; Zhao, L.M.; Xiang, N. 
8Nov-2007Comparative studies of passively mode-locked Nd:Gd0.64y 0.36VO4 laser and Nd:GdVO4 laser with semiconductor saturable absorber mirrorsKong, J.; Chan, C.C.; Tang, D.Y.; Xiang, N. ; Liu, H.F. ; Pessa, M.; Qin, L.J.
91-Jun-2013Coupling of surface plasmon with InGaAs/GaAs quantum well emission by gold nanodisk arraysGao, H.; Tung, K.H.P.; Teng, J.; Chua, S.J. ; Xiang, N. 
102008Demonstration and control of the fast-absorption recovery times of the InGaN/GaN quantum well saturable absorbersLin, F. ; Xiang, N. ; Chen, P.; Chua, S.J. ; Irshad, A.; Roither, S.; Pugzlys, A.; Baltuska, A.
112006Design and optimization of GaN-based semiconductor saturable absorber mirror operating at around 415 nmLin, F. ; Xiang, N. ; Wang, X.C.; Arokiaraj, J.; Liu, W.; Liu, H.F. ; Chua, S.J. 
122009Effect of composition disorders on band structure and optical gain spectra of GaInNAs/GaAs quantum wellsDixit, V.; Liu, H.; Xiang, N. 
132006Effect of in-segregation on sub bands in Ga1-x′in x′As1-y′/GaAs quantum well for 1.3 and 1.55 μm operation wavelengthsDixit, V.; Liu, H.F. ; Xiang, N. 
14Sep-2006Effect of In-segregation on subbands in GaInNAs/GaAs quantum wells emission around 1.3 and 1.55 micronDixit, V.; Liu, H.F. ; Xiang, N. 
152008Effect of nitrogen on indium segregation in GaInNAs/GaAs quantum wellsDixit, V.; Liu, H.F.; Xiang, N. 
162-Feb-2006Effect of rapid thermal annealing on the properties of GaNAs thin films grown by molecular beam epitaxyLiu, H.F. ; Xiang, N. ; Chua, S.J. ; Tripathy, S.
172007Effects of substrate on the structure and orientation of ZnO thin film grown by rf-magnetron sputteringLiu, H.F.; Chua, S.J.; Hu, G.X. ; Gong, H. ; Xiang, N. 
181-Mar-2011Fabrication and transfer of nanoporous alumina thin films for templating applications: Metal dots array deposition and porous ZnO film growthLiu, H.F.; Lim, E.S.; Tung, P.K.H.; Xiang, N. 
192010Fabrication of ordered metal nano-particles on a quantum well structureTung, K.H.; Xiang, N. 
202013Free-standing monolithic LiNbO3 photonic crystal slabsJun, D.; Vang, S.K.; Hussian, S.; Hongwei, G.; Thor, L.S.; Png, C.E.; Ning, X. ; Bettiol, A.A. ; Danner, A.J.