Full Name
LIU HONGFEI
Variants
Liu, H.F.
 
 
 
Email
elelhf@nus.edu.sg
 

Publications

Results 1-20 of 20 (Search time: 0.004 seconds).

Issue DateTitleAuthor(s)
12006Anneal-induced interdiffusion in 1.3-μm GaInNAs/GaAs quantum well structures grown by molecular-beam epitaxyLiu, H.F. ; Dixit, V.; Xiang, N. 
2Apr-2007Anneal-induced structural changes of GaIn(N)As/Ga(N)As multiple quantum wells grown by molecular beam epitaxyLiu, H.F. ; Xiang, N. ; Zhou, H.L.; Chua, S.J.; Yang, P. ; Moser, H.O. 
315-Apr-2006Annealing behavior of N-bonding configurations in GaN 0.023As0.977 ternary alloy grown on GaAs (0 0 1) substrate by molecular beam epitaxyLiu, H.F. ; Xiang, N. ; Chua, S.J.
4Nov-2007Comparative studies of passively mode-locked Nd:Gd0.64y 0.36VO4 laser and Nd:GdVO4 laser with semiconductor saturable absorber mirrorsKong, J.; Chan, C.C.; Tang, D.Y.; Xiang, N. ; Liu, H.F. ; Pessa, M.; Qin, L.J.
52006Design and optimization of GaN-based semiconductor saturable absorber mirror operating at around 415 nmLin, F. ; Xiang, N. ; Wang, X.C.; Arokiaraj, J.; Liu, W.; Liu, H.F. ; Chua, S.J. 
62006Effect of in-segregation on sub bands in Ga1-x′in x′As1-y′/GaAs quantum well for 1.3 and 1.55 μm operation wavelengthsDixit, V.; Liu, H.F. ; Xiang, N. 
7Sep-2006Effect of In-segregation on subbands in GaInNAs/GaAs quantum wells emission around 1.3 and 1.55 micronDixit, V.; Liu, H.F. ; Xiang, N. 
82006Effect of indium segregation on optical and structural properties of GaInNAsGaAs quantum wells at emission wavelength of 1.3 μmLiu, H.F. ; Dixit, V.; Xiang, N.
92-Feb-2006Effect of rapid thermal annealing on the properties of GaNAs thin films grown by molecular beam epitaxyLiu, H.F. ; Xiang, N. ; Chua, S.J. ; Tripathy, S.
1026-Mar-2007GaN-based semiconductor saturable absorber mirror operating around 415 nmXiang, N. ; Lin, F. ; Li, H.P. ; Liu, H.F. ; Liu, W.; Ji, W. ; Chua, S.J.
1128-Oct-2006Growth of InAs on micro- and nano-scale patterned GaAs(001) substrates by molecular beam epitaxyLiu, H.F. ; Xiang, N. ; Chua, S.J.
1226-Mar-2007Influence of GaNAs strain compensation layers upon annealing of GaIn(N)As/GaAs quantum wellsLiu, H.F. ; Xiang, N. 
131-Mar-2006Influence of GaNAs strain-compensation layers on the optical properties of Galn(N)As/GaAs quantum wells upon annealingLiu, H.F. ; Xiang, N. 
142006Influence of N incorporation on in content in GaInNAs/GaNAs quantum wells grown by plasma-assisted molecular beam epitaxyLiu, H.F. ; Xiang, N. ; Chua, S.J.
15Apr-2007Monolithic semiconductor saturable absorber mirror with strain-compensated GaInAs/GaAsP quantum wellsXiang, N. ; Liu, H.F. ; Kong, J.; Tang, D.Y.; Pessa, M.
1615-May-2006Raman scattering probe of anharmonic effects due to temperature and compositional disorder in Ga N x As 1-xLiu, H.F. ; Xiang, N. ; Tripathy, S.; Chua, S.J. 
1715-May-2006Raman scattering probe of anharmonic effects due to temperature and compositional disorder in Ga N x As 1-xLiu, H.F. ; Xiang, N. ; Tripathy, S.; Chua, S.J. 
1815-May-2006Raman scattering probe of anharmonic effects due to temperature and compositional disorder in Ga N x As 1-xLiu, H.F. ; Xiang, N. ; Tripathy, S.; Chua, S.J. 
191-May-2006Structural and optical properties of GaInAs/GaAs and GaInNAs/GaNAs multiple quantum wells upon postgrowth annealingLiu, H.F. ; Xiang, N. ; Chua, S.J.; Pessa, M.
2025-Oct-2006Temperature dependence of Raman spectrum of GaNAs ternary alloys grown by molecular beam epitaxyLiu, H.F. ; Xiang, N. ; Tripathy, S.; Chua, S.J.