Full Name
Chunxiang Zhu
Variants
Zhu, C.-X.
Zhu, C.X.
ZHU, CHUNXIANG
Zhu Chunxiang
Zhu, C.
 
 
 
Email
elezhucx@nus.edu.sg
 

Refined By:
Department:  COLLEGE OF DESIGN AND ENGINEERING
Type:  Others

Results 1-7 of 7 (Search time: 0.004 seconds).

Issue DateTitleAuthor(s)
1Apr-2004A novel self-aligned offset-gated polysilicon TFT using high-κ dielectric spacersXiong, Z.; Liu, H.; Zhu, C. ; Sin, J.K.O.
21-Mar-2003Dependence of chemical composition ratio on electrical properties of HfO2-Al2O3 gate dielectricJoo, M.S. ; Cho, B.J. ; Yeo, C.C.; Wu, N.; Yu, H. ; Zhu, C. ; Li, M.F. ; Kwong, D.-L.; Balasubramanian, N.
32009Erratum: "An organic-based diode-memory device with rectifying property for crossbar memory array applications" (IEEE Electron Device Letters (2009) vol. 30 (5) (487-489)Teo, E.Y.H. ; Zhang, C. ; Lim, S.L.; Kang, E.-T. ; Chan, D.S.H. ; Zhu, C. 
4Jul-2003Lanthanide (Tb)-doped HfO2 for high-density MIM capacitorsKim, S.J. ; Cho, B.J. ; Li, M.-F. ; Zhu, C. ; Chin, A.; Kwong, D.-L.
5Apr-2003Physical and electrical characteristics of HfN gate electrode for advanced MOS devicesYu, H.Y. ; Lim, H.F. ; Chen, J.H. ; Li, M.F. ; Zhu, C. ; Tung, C.H.; Du, A.Y.; Wang, W.D.; Chi, D.Z.; Kwong, D.-L.
6May-2004Schottky-barrier S/D MOSFETs with high-K gate dielectrics and metal-gate electrodeZhu, S. ; Yu, H.Y. ; Whang, S.J. ; Chen, J.H. ; Shen, C.; Zhu, C. ; Lee, S.J. ; Li, M.F. ; Chan, D.S.H. ; Yoo, W.J. ; Du, A.; Tung, C.H. ; Singh, J.; Chin, A.; Kwong, D.L.
7Oct-2003Very high density RF MIM capacitors (17 fF/μm2) using high-κ Al2O3 doped Ta2O5 dielectricsYang, M.Y.; Huang, C.H.; Chin, A.; Zhu, C. ; Cho, B.J. ; Li, M.F. ; Kwong, D.-L.