Please use this identifier to cite or link to this item:
https://doi.org/10.1109/LED.2009.2033735
Title: | Erratum: "An organic-based diode-memory device with rectifying property for crossbar memory array applications" (IEEE Electron Device Letters (2009) vol. 30 (5) (487-489) | Authors: | Teo, E.Y.H. Zhang, C. Lim, S.L. Kang, E.-T. Chan, D.S.H. Zhu, C. |
Keywords: | Arrays Chemicals Computers Electron devices Laboratories Silicon Switching circuits |
Issue Date: | 2009 | Citation: | Teo, E.Y.H., Zhang, C., Lim, S.L., Kang, E.-T., Chan, D.S.H., Zhu, C. (2009). Erratum: "An organic-based diode-memory device with rectifying property for crossbar memory array applications" (IEEE Electron Device Letters (2009) vol. 30 (5) (487-489). IEEE Electron Device Letters 30 (11) : 1218-. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2009.2033735 | Source Title: | IEEE Electron Device Letters | URI: | http://scholarbank.nus.edu.sg/handle/10635/51278 | ISSN: | 07413106 | DOI: | 10.1109/LED.2009.2033735 |
Appears in Collections: | Staff Publications |
Show full item record
Files in This Item:
There are no files associated with this item.
SCOPUSTM
Citations
2
checked on Mar 2, 2021
WEB OF SCIENCETM
Citations
1
checked on Feb 22, 2021
Page view(s)
105
checked on Mar 2, 2021
Google ScholarTM
Check
Altmetric
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.