Please use this identifier to cite or link to this item:
https://doi.org/10.1109/LED.2009.2033735
| Title: | Erratum: "An organic-based diode-memory device with rectifying property for crossbar memory array applications" (IEEE Electron Device Letters (2009) vol. 30 (5) (487-489) | Authors: | Teo, E.Y.H. Zhang, C. Lim, S.L. Kang, E.-T. Chan, D.S.H. Zhu, C. |
Keywords: | Arrays Chemicals Computers Electron devices Laboratories Silicon Switching circuits |
Issue Date: | 2009 | Citation: | Teo, E.Y.H., Zhang, C., Lim, S.L., Kang, E.-T., Chan, D.S.H., Zhu, C. (2009). Erratum: "An organic-based diode-memory device with rectifying property for crossbar memory array applications" (IEEE Electron Device Letters (2009) vol. 30 (5) (487-489). IEEE Electron Device Letters 30 (11) : 1218-. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2009.2033735 | Source Title: | IEEE Electron Device Letters | URI: | http://scholarbank.nus.edu.sg/handle/10635/51278 | ISSN: | 07413106 | DOI: | 10.1109/LED.2009.2033735 |
| Appears in Collections: | Staff Publications |
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