Please use this identifier to cite or link to this item:
https://doi.org/10.1109/LED.2009.2033735
| Title: | Erratum: "An organic-based diode-memory device with rectifying property for crossbar memory array applications" (IEEE Electron Device Letters (2009) vol. 30 (5) (487-489) | Authors: | Teo, E.Y.H. Zhang, C. Lim, S.L. Kang, E.-T. Chan, D.S.H. Zhu, C. |
Keywords: | Arrays Chemicals Computers Electron devices Laboratories Silicon Switching circuits |
Issue Date: | 2009 | Citation: | Teo, E.Y.H., Zhang, C., Lim, S.L., Kang, E.-T., Chan, D.S.H., Zhu, C. (2009). Erratum: "An organic-based diode-memory device with rectifying property for crossbar memory array applications" (IEEE Electron Device Letters (2009) vol. 30 (5) (487-489). IEEE Electron Device Letters 30 (11) : 1218-. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2009.2033735 | Source Title: | IEEE Electron Device Letters | URI: | http://scholarbank.nus.edu.sg/handle/10635/51278 | ISSN: | 07413106 | DOI: | 10.1109/LED.2009.2033735 |
| Appears in Collections: | Staff Publications |
Show full item record
Files in This Item:
There are no files associated with this item.
SCOPUSTM
Citations
2
checked on Jun 5, 2020
WEB OF SCIENCETM
Citations
1
checked on May 27, 2020
Page view(s)
95
checked on Jun 1, 2020
Google ScholarTM
Check
Altmetric
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.