Please use this identifier to cite or link to this item: https://doi.org/10.1109/LED.2009.2033735
Title: Erratum: "An organic-based diode-memory device with rectifying property for crossbar memory array applications" (IEEE Electron Device Letters (2009) vol. 30 (5) (487-489)
Authors: Teo, E.Y.H. 
Zhang, C. 
Lim, S.L.
Kang, E.-T. 
Chan, D.S.H. 
Zhu, C. 
Keywords: Arrays
Chemicals
Computers
Electron devices
Laboratories
Silicon
Switching circuits
Issue Date: 2009
Citation: Teo, E.Y.H., Zhang, C., Lim, S.L., Kang, E.-T., Chan, D.S.H., Zhu, C. (2009). Erratum: "An organic-based diode-memory device with rectifying property for crossbar memory array applications" (IEEE Electron Device Letters (2009) vol. 30 (5) (487-489). IEEE Electron Device Letters 30 (11) : 1218-. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2009.2033735
Source Title: IEEE Electron Device Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/51278
ISSN: 07413106
DOI: 10.1109/LED.2009.2033735
Appears in Collections:Staff Publications

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