Very high density RF MIM capacitors (17 fF/μm2) using high-κ Al2O3 doped Ta2O5 dielectrics

Please use this identifier to cite or link to this item: https://doi.org/10.1109/LMWC.2003.818532

Title:	Very high density RF MIM capacitors (17 fF/μm2) using high-κ Al2O3 doped Ta2O5 dielectrics
Authors:	Yang, M.Y. Huang, C.H. Chin, A. Zhu, C. Cho, B.J. Li, M.F. Kwong, D.-L.
Keywords:	Capacitor Dielectric constant Frequency dependence High κ MIM RF
Issue Date:	Oct-2003
Citation:	Yang, M.Y., Huang, C.H., Chin, A., Zhu, C., Cho, B.J., Li, M.F., Kwong, D.-L. (2003-10). Very high density RF MIM capacitors (17 fF/μm2) using high-κ Al2O3 doped Ta2O5 dielectrics. IEEE Microwave and Wireless Components Letters 13 (10) : 431-433. ScholarBank@NUS Repository. https://doi.org/10.1109/LMWC.2003.818532
Abstract:	Using high-κ Al2O3 doped Ta2O5 dielectric, we have obtained record high MIM capacitance density of 17 fF / μm2 at 100 KHz, small 5% capacitance reduction to RF frequency range, and low leakage current density of 8.9 × 10-7 A/cm2. In combination of both high capacitor density and low leakage current density, a very low leakage current of 5.2 × 10-12 A is calculated for a typical large 10 pF capacitor used in RF IC that is even smaller than that of a deep sub-μm MOSFET. This very high capacitance density with good MIM capacitor characteristics can significantly reduce the chip size of RF ICs.
Source Title:	IEEE Microwave and Wireless Components Letters
URI:	http://scholarbank.nus.edu.sg/handle/10635/84425
ISSN:	15311309
DOI:	10.1109/LMWC.2003.818532
Appears in Collections:	Staff Publications

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