Please use this identifier to cite or link to this item: https://doi.org/10.1109/LMWC.2003.818532
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dc.titleVery high density RF MIM capacitors (17 fF/μm2) using high-κ Al2O3 doped Ta2O5 dielectrics
dc.contributor.authorYang, M.Y.
dc.contributor.authorHuang, C.H.
dc.contributor.authorChin, A.
dc.contributor.authorZhu, C.
dc.contributor.authorCho, B.J.
dc.contributor.authorLi, M.F.
dc.contributor.authorKwong, D.-L.
dc.date.accessioned2014-10-07T04:52:32Z
dc.date.available2014-10-07T04:52:32Z
dc.date.issued2003-10
dc.identifier.citationYang, M.Y., Huang, C.H., Chin, A., Zhu, C., Cho, B.J., Li, M.F., Kwong, D.-L. (2003-10). Very high density RF MIM capacitors (17 fF/μm2) using high-κ Al2O3 doped Ta2O5 dielectrics. IEEE Microwave and Wireless Components Letters 13 (10) : 431-433. ScholarBank@NUS Repository. https://doi.org/10.1109/LMWC.2003.818532
dc.identifier.issn15311309
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/84425
dc.description.abstractUsing high-κ Al2O3 doped Ta2O5 dielectric, we have obtained record high MIM capacitance density of 17 fF / μm2 at 100 KHz, small 5% capacitance reduction to RF frequency range, and low leakage current density of 8.9 × 10-7 A/cm2. In combination of both high capacitor density and low leakage current density, a very low leakage current of 5.2 × 10-12 A is calculated for a typical large 10 pF capacitor used in RF IC that is even smaller than that of a deep sub-μm MOSFET. This very high capacitance density with good MIM capacitor characteristics can significantly reduce the chip size of RF ICs.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/LMWC.2003.818532
dc.sourceScopus
dc.subjectCapacitor
dc.subjectDielectric constant
dc.subjectFrequency dependence
dc.subjectHigh κ
dc.subjectMIM
dc.subjectRF
dc.typeOthers
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1109/LMWC.2003.818532
dc.description.sourcetitleIEEE Microwave and Wireless Components Letters
dc.description.volume13
dc.description.issue10
dc.description.page431-433
dc.description.codenIMWCB
dc.identifier.isiut000185719300003
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