1. ScholarBank@NUS

Chunxiang Zhu

rp01634

Collaboration Map View Statistics Email Alert RSS Feed

Profile

Full Name
Chunxiang Zhu
Variants
Zhu, C.-X.
Zhu, C.X.
ZHU, CHUNXIANG
Zhu Chunxiang
Zhu, C.
 
Main Affiliation
 
Faculty
 
Email
elezhucx@nus.edu.sg
 

Publications

Refined By:
Author:  Chin, A.
Author:  Wang, X.P.
Department:  COLLEGE OF DESIGN AND ENGINEERING

Results 1-13 of 13 (Search time: 0.005 seconds).

Issue DateTitleAuthor(s)
12005A new gate dielectric HfLaO with metal gate work function tuning capability and superior NMOSFETs performanceWang, X.P.; Li, M.F. ; Chin, A. ; Zhu, C. ; Chi, R.; Yu, X.F.; Shen, C.; Du, A.Y.; Chan, D.S.H. ; Kwong, D.-L.
22007A novel high-k gate dielectric HfLaO for next generation CMOS technologyLi, M.-F. ; Wang, X.P.; Yu, H.Y.; Zhu, C.X. ; Chin, A.; Du, A.Y.; Shao, J.; Lu, W.; Shen, X.C.; Liu, P.; Hung, S.; Lo, P.; Kwong, D.L.
32004High mobility and excellent electrical stability of MOSFETs using a novel HfTaO gate dielectricYu, X.; Zhu, C. ; Wang, X.P.; Li, M.F. ; Chin, A.; Du, A.Y.; Wang, W.D.; Kwong, D.-L.
42006High temperature stable [Ir3Si-TaN]/HfLaON CMOS with large work-function differenceWu, C.H.; Hung, B.F.; Chin, A.; Wang, S.J.; Chen, W.J.; Wang, X.P.; Li, M.-F. ; Zhu, C. ; Jin, Y.; Tao, H.J.; Chen, S.C.; Liang, M.S.
5Apr-2007High-temperature stable HfLaON p-MOSFETs with high-work-function Ir 3Si gateWu, C.H.; Hung, B.F.; Chin, A.; Wang, S.J.; Wang, X.P.; Li, M.-F. ; Zhu, C. ; Yen, F.Y.; Hou, Y.T.; Jin, Y.; Tao, H.J.; Chen, S.C.; Liang, M.S.
62005New insights in hf based high-k gate dielectrics in mosfetsLi, M.-F. ; Zhu, C. ; Shen, C.; Yu, X.F.; Wang, X.P.; Feng, Y.P. ; Du, A.Y.; Yeo, Y.C. ; Samudra, G. ; Chin, A. ; Kwong, D.L. 
7Jun-2006Physical and electrical characteristics of high-κ gate dielectric Hf(1-x)LaxOyWang, X.P.; Li, M.F. ; Chin, A. ; Zhu, C.X. ; Shao, J.; Lu, W.; Shen, X.C.; Yu, X.F.; Chi, R.; Shen, C.; Huan, A.C.H.; Pan, J.S.; Du, A.Y.; Lo, P.; Chan, D.S.H. ; Kwong, D.-L. 
82004Selected topics on HfO 2 gate dielectrics for future ULSI CMOS devicesLi, M.F. ; Yu, H.Y. ; Hou, Y.T. ; Kang, J.F. ; Wang, X.P.; Shen, C.; Ren, C.; Yeo, Y.C. ; Zhu, C.X. ; Chan, D.S.H. ; Chin, A.; Kwong, D.L.
9Jan-2006Tuning effective metal gate work function by a novel gate dielectric HfLaO for nMOSFETsWang, X.P.; Li, M.-F. ; Ren, C.; Yu, X.F.; Shen, C.; Ma, H.H. ; Chin, A. ; Zhu, C.X. ; Ning, J.; Yu, M.B.; Kwong, D.-L.
10Apr-2007Wide Vfband Vth tunability for metal-gated MOS devices with HfLaO gate dielectricsWang, X.P.; Yu, H.Y.; Li, M.-F. ; Zhu, C.X. ; Biesemans, S.; Chin, A.; Sun, Y.Y.; Feng, Y.P. ; Lim, A.; Yeo, Y.-C. ; Loh, W.Y.; Lo, G.Q.; Kwong, D.-L.
11Jan-2008Widely tunable work function TaN/Ru stacking layer on HfLaO gate dielectricWang, X.P.; Li, M.-F. ; Yu, H.Y.; Yang, J.J.; Chen, J.D. ; Zhu, C.X. ; Du, A.Y.; Loh, W.Y.; Biesemans, S.; Chin, A.; Lo, G.Q.; Kwong, D.-L.
122007Work function tunability by incorporating lanthanum and aluminum into refractory metal nitrides and a feasible integration processWang, X.P.; Li, M.-F. ; Yu, H.Y.; Ren, C.; Loh, W.Y.; Zhu, C.X. ; Chin, A.; Trigg, A.D.; Yeo, Y.-C. ; Biesemans, S.; Lo, G.Q.; Kwong, D.L.
13Nov-2007Work function tunability of refractory metal nitrides by lanthanum or aluminum doping for advanced CMOS devicesWang, X.P.; Lim, A.E.-J.; Yu, H.Y.; Li, M.-F. ; Ren, C.; Loh, W.-Y.; Zhu, C.X. ; Chin, A. ; Trigg, A.D.; Yeo, Y.-C. ; Biesemans, S.; Lo, G.-Q.; Kwong, D.-L.