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Samudra,Ganesh S

rp00141

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Full Name
Samudra,Ganesh S
Variants
Samudra, G.G.
SAMUDRA, GANESH SHANKAR
Samudra', G.S.
Samudra, Ganesh S.
Samudra, Ganesh Shankar
Shankar Samudra, Ganesh
Samudra, G.S.
Samudra, Ganesh
Samudra, G.
 
Main Affiliation
 
Faculty
 
Email
eleshanr@nus.edu.sg
 

Publications

Refined By:
Date Issued:  [2000 TO 2009]

Results 181-200 of 200 (Search time: 0.005 seconds).

Issue DateTitleAuthor(s)
181Jun-2007Strained thin-body p-MOSFET with condensed silicon-germanium source/ drain for enhanced drive current performanceAng, K.-W.; Chui, K.-J.; Madan, A.; Wong, L.-Y.; Tung, C.-H.; Balasubramanian, N.; Li, M.-F. ; Samudra, G.S. ; Yeo, Y.-C. 
182Sep-2006Strained-SOI n-channel transistor with silicon-carbon source/drain regions for carrier transport enhancementChui, K.-J.; Ang, K.-W.; Chin, H.-C.; Shen, C.; Wong, L.-Y.; Tung, C.-H.; Balasubramanian, N.; Li, M.F. ; Samudra, G.S. ; Yeo, Y.-C. 
1832007Sub 50nm strained n-FETs formed on silicon-germanium-on-insulator substrates and the integration of silicon source/drain stressorsWang, G.H.; Toh, E.-H.; Hoe, K.-M.; Tripathy, S.; Lo, G.-Q.; Samudra, G. ; Yeo, Y.-C. 
184Aug-2007Sub-0.1-eV effective Schottky-barrier height for NiSi on n-type Si (100) using antimony segregationWong, H.-S.; Chan, L.; Samudra, G. ; Yeo, Y.-C. 
1852007Sub-30 nm FinFETs with schottky-barrier source/drain featuring complementary metal silicides and fully-silicided gate for P-FinFETsLee, R.T.P. ; Tan, K.-M.; Liow, T.-Y.; Lim, A.E.-J.; Lo, G.-Q.; Samudra', G.S. ; Chi, D.-Z.; Yeo, Y.-C. 
18624-Apr-2007Sub-30nm strained p-channel fin-type field-effect transistors with condensed SiGe source/drain stressorsTan, K.-M.; Liow, T.-Y.; Lee, R.T.P. ; Chui, K.-J.; Tung, C.-H.; Balasubramanian, N.; Samudra, G.S. ; Yoo, W.-J. ; Yeo, Y.-C. 
1872008Sub-femto-farad capacitance-voltage characteristics of single channel gate-all-around nano wire transistors for electrical characterization of carrier transportZhao, H.; Rustagi, S.C.; Singh, N.; Ma, F.-J. ; Samudra, G.S. ; Budhaaraju, K.D.; Manhas, S.K.; Tung, C.H.; Lo, G.Q.; Baccarani, G.; Kwong, D.L.
1882009Sulfur implant for reducing nickel silicide contact resistance in FinFETs with silicon-carbon source/drainKoh, S.-M.; Sinha, M.; Tong, Y.; Chin, H.-C.; Fang, W.-W.; Zhang, X.; Ng, C.-M.; Samudra, G. ; Yeo, Y.-C. 
1892007Superjunction power LDMOS on partial SOI platformChen, Y.; Buddharaju, K.D.; Liang, Y.C. ; Samudra, G.S. ; Feng, H.H.
190May-2002Supply-voltage optimization for below-70-nm technology-node MOSFETsWakabayashi, H.; Samudra, G.S. ; Djomehri, I.J.; Nayfeh, H.; Antoniadis, D.A.
191Feb-2005Theoretical analyses of oxide-bypassed superjunction power metal oxide semiconductor field effect transistor devicesChen, Y.; Liang, Y.C. ; Samudra, G.S. 
1922005Thin body silicon-on-insulator N-MOSFET with silicon-carbon source/drain regions for performance enhancementAng, K.-W.; Chui, K.-J.; Bliznetsov, V.; Wang, Y.; Wong, L.-Y.; Tung, C.-H.; Balasubramanian, N.; Li, M.-F. ; Samudra, G. ; Yeo, Y.-C. 
1932005Three-port RF characterization of MOS transistorsMahalingam, U.; Rustagi, S.C.; Samudra, G.S. 
194Nov-2003Tunable Oxide-Bypassed Trench Gate MOSFET: Breaking the Ideal Superjunction MOSFET Performance Line at Equal Column WidthYang, X.; Liang, Y.C. ; Samudra, G.S. ; Liu, Y.
1952002Tunable Oxide-Bypassed VDMOS (OBVDMOS): Breaking the silicon limit for the second generationLiang, Y.C. ; Yang, X.; Samudra, G.S. ; Gan, K.P.; Liu, Y. 
1962004Tunable trench gate power MOSFET: A feasible superjunction device and process technologyYang, X.; Liang, Y.C. ; Samudra, G.S. ; Liu, Y.
19712-Sep-2005Tungsten nanocrystals embedded in high- k materials for memory applicationSamanta, S.K. ; Yoo, W.J. ; Samudra, G. ; Tok, E.S. ; Bera, L.K.; Balasubramanian, N.
1982009Tunneling field-effect transistor: Effect of strain and temperature on tunneling currentGuo, P.-F.; Yang, L.-T.; Yang, Y.; Fan, L.; Han, G.-Q. ; Samudra, G.S. ; Yeo, Y.-C. 
1992008Uniaxial strained silicon n-FETs on silicon-germanium-on-insulator substrates with an e-Si0.7Ge0.3 stress transfer layer and source/drain stressors for performance enhancementWang, G.H.; Toh, E.-H.; Foo, Y.-L.; Tripathy, S. ; Balakumar, S.; Lo, G.-Q.; Samudra, G. ; Yeo, Y.-C. 
200Jun-2007Yttrium- and terbium-based interlayer on SiO2 and HfO2 gate dielectrics for work function modulation of nickel fully silicided gate in nMOSFETLim, A.E.-J.; Lee, R.T.P. ; Wang, X.P.; Hwang, W.S.; Tung, C.H.; Samudra, G.S. ; Kwong, D.-L.; Yeo, Y.-C.