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|Title:||Tungsten nanocrystals embedded in high- k materials for memory application||Authors:||Samanta, S.K.
|Issue Date:||12-Sep-2005||Citation:||Samanta, S.K., Yoo, W.J., Samudra, G., Tok, E.S., Bera, L.K., Balasubramanian, N. (2005-09-12). Tungsten nanocrystals embedded in high- k materials for memory application. Applied Physics Letters 87 (11) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2045555||Abstract:||The formation of tungsten nanocrystals (W-NCs) on atomic-layer-deposited HfAlO Al2 O3 tunnel oxide was demonstrated for application in a memory device. It was found that the density and size distribution of W-NCs are not only controlled by the initial film thickness, annealing temperature, and time, but also by the metaltunnel oxide interface structure. Well-isolated W-NCs with an average diameter of 5 nm and a surface density of 5× 1011 cm-2 were obtained by applying a thin Al2 O3 wetting layer onto HfAlO tunneling oxide. A large flatband voltage shift of 5.7 V was observed from capacitance-voltage measurement when a bias voltage up to ±4 V was applied. © 2005 American Institute of Physics.||Source Title:||Applied Physics Letters||URI:||http://scholarbank.nus.edu.sg/handle/10635/57719||ISSN:||00036951||DOI:||10.1063/1.2045555|
|Appears in Collections:||Staff Publications|
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