Full Name
Sudhiranjan Tripathy
(not current staff)
Tripathy, S.


Results 1-13 of 13 (Search time: 0.008 seconds).

Issue DateTitleAuthor(s)
1Sep-2001Characterization of inductively coupled plasma etched surface of GaN using Cl2/BCl3 chemistryTripathy, S. ; Ramam, A.; Chua, S.J.; Pan, J.S.; Huan, A.
215-Feb-2002Electronic and vibronic properties of Mg-doped GaN: The influence of etching and annealingTripathy, S. ; Chua, S.J. ; Ramam, A.; Sia, E.K.; Pan, J.S.; Lim, R.; Yu, G. ; Shen, Z.X. 
36-May-2002Electronic and vibronic properties of n-type GaN: The influence of etching and annealingTripathy, S. ; Chua, S.J. ; Ramam, A.
41-Jan-2003Erratum: Micro-Raman investigation of strain in GaN and AlxGa1-xN/GaN heterostructures grown on Si(111) (Journal of Applied Physics (2002) 92 (3503))Tripathy, S. ; Chua, S.J. ; Chen, P.; Miao, Z.L.
5Jan-2004Influence of substrate misorientation on vibrational properties of In 1-x-yGa xAl yAs grown on InPTripathy, S. ; Thwin-Htoo; Chua, S.J. 
62002Interplay of defects, microstructures, and surface stoichiometry during plasma processing of GaNRamam, A.; Tripathy, S. ; Chua, S.J. 
72008Luminescence and vibrational properties of erbium-implanted nanoporous GaNSoh, C.B.; Chua, S.J. ; Sim, S.H.; Tripathy, S. ; Alves, E.
81-Oct-2002Micro-Raman investigation of strain in GaN and Al xGa 1-xN/GaN heterostructures grown on Si(111)Tripathy, S. ; Chua, S.J. ; Chen, P.; Miao, Z.L.
91-May-2002Micro-Raman scattering in laterally epitaxial overgrown GaNTripathy, S. ; Chua, S.J. ; Hao, M.S.; Sia, E.K.; Ramam, A.; Zhang, J.; Sun, W.H.; Wang, L.S.
102002Micro-Raman spectroscopic investigation of NiSi films formed on BF2 +-, B+-and non-implanted (100) Si substratesDonthu, S.K.; Chi, D.Z.; Wong, A.S.W.; Chua, S.J. ; Tripathy, S. 
1115-Oct-2002Morphological and structural analyses of plasma-induced damage to n-type GaNChoi, H.W.; Chua, S.J. ; Tripathy, S. 
12Feb-2004Optical transitions and interface structure in (GaP)m/(AlP) n modulated period superlatticesSoni, R.K.; Tripathy, S. ; Asahi, H.
132008Uniaxial strained silicon n-FETs on silicon-germanium-on-insulator substrates with an e-Si0.7Ge0.3 stress transfer layer and source/drain stressors for performance enhancementWang, G.H.; Toh, E.-H.; Foo, Y.-L.; Tripathy, S. ; Balakumar, S.; Lo, G.-Q.; Samudra, G. ; Yeo, Y.-C.