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Title: Micro-Raman spectroscopic investigation of NiSi films formed on BF2 +-, B+-and non-implanted (100) Si substrates
Authors: Donthu, S.K.
Chi, D.Z.
Wong, A.S.W.
Chua, S.J. 
Tripathy, S. 
Issue Date: 2002
Citation: Donthu, S.K.,Chi, D.Z.,Wong, A.S.W.,Chua, S.J.,Tripathy, S. (2002). Micro-Raman spectroscopic investigation of NiSi films formed on BF2 +-, B+-and non-implanted (100) Si substrates. Materials Research Society Symposium - Proceedings 716 : 465-470. ScholarBank@NUS Repository.
Abstract: Micro-Raman spectroscopic technique was used to investigate vibrational properties of NiSi thin films formed on three different (100) Si substrates: non-implanted, 20-keV BF2 +-implanted, and 20-keV B+-implanted. Raman spectroscopy was also performed on NiSi powder to identify various phonon modes associated with different selection rules of group theory. It was found that Raman peaks of NiSi thin films formed on BF2 +-implanted substrate were broader and shifted to lower frequency side compared to films formed on other substrates. The broadening of the Raman peaks in these films, which also exhibit much improved thermal stability, is attributed to small grains resulting probably from fluorine segregation to grain boundaries and interface. It is further proposed that besides grain boundary segregation, the excess fluorine in the film influences the stress-state in the silicide film resulting in shift of phonon peak positions.
Source Title: Materials Research Society Symposium - Proceedings
ISSN: 02729172
Appears in Collections:Staff Publications

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