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|Title:||Influence of substrate misorientation on vibrational properties of In 1-x-yGa xAl yAs grown on InP||Authors:||Tripathy, S.
|Issue Date:||Jan-2004||Citation:||Tripathy, S., Thwin-Htoo, Chua, S.J. (2004-01). Influence of substrate misorientation on vibrational properties of In 1-x-yGa xAl yAs grown on InP. Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films 22 (1) : 111-116. ScholarBank@NUS Repository. https://doi.org/10.1116/1.1633567||Abstract:||Vibrational properties of In 1-x-yGa xAl yAs(x=0.13, y=0.34) layers that were grown lattice matched to InP(100) were studied. Micro-Raman scattering was used to study the quality of epitaxial films and atomic force microscopy was used to study the surface topography. The results show the three-mode behavior of optical phonons in quaternary alloys. It was also found that the narrowest Raman linewidth and much weaker forbidden modes are found in the layer grown on InP(100).||Source Title:||Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films||URI:||http://scholarbank.nus.edu.sg/handle/10635/82540||ISSN:||07342101||DOI:||10.1116/1.1633567|
|Appears in Collections:||Staff Publications|
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