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Please use this identifier to cite or link to this item: https://doi.org/10.1116/1.1633567
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dc.titleInfluence of substrate misorientation on vibrational properties of In 1-x-yGa xAl yAs grown on InP
dc.contributor.authorTripathy, S.
dc.contributor.authorThwin-Htoo
dc.contributor.authorChua, S.J.
dc.date.accessioned2014-10-07T04:30:35Z
dc.date.available2014-10-07T04:30:35Z
dc.date.issued2004-01
dc.identifier.citationTripathy, S., Thwin-Htoo, Chua, S.J. (2004-01). Influence of substrate misorientation on vibrational properties of In 1-x-yGa xAl yAs grown on InP. Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films 22 (1) : 111-116. ScholarBank@NUS Repository. https://doi.org/10.1116/1.1633567
dc.identifier.issn07342101
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/82540
dc.description.abstractVibrational properties of In 1-x-yGa xAl yAs(x=0.13, y=0.34) layers that were grown lattice matched to InP(100) were studied. Micro-Raman scattering was used to study the quality of epitaxial films and atomic force microscopy was used to study the surface topography. The results show the three-mode behavior of optical phonons in quaternary alloys. It was also found that the narrowest Raman linewidth and much weaker forbidden modes are found in the layer grown on InP(100).
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1116/1.1633567
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1116/1.1633567
dc.description.sourcetitleJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
dc.description.volume22
dc.description.issue1
dc.description.page111-116
dc.description.codenJVTAD
dc.identifier.isiut000188759800017
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