Please use this identifier to cite or link to this item:
|Title:||Influence of substrate misorientation on vibrational properties of In 1-x-yGa xAl yAs grown on InP|
|Authors:||Tripathy, S. |
|Citation:||Tripathy, S., Thwin-Htoo, Chua, S.J. (2004-01). Influence of substrate misorientation on vibrational properties of In 1-x-yGa xAl yAs grown on InP. Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films 22 (1) : 111-116. ScholarBank@NUS Repository. https://doi.org/10.1116/1.1633567|
|Abstract:||Vibrational properties of In 1-x-yGa xAl yAs(x=0.13, y=0.34) layers that were grown lattice matched to InP(100) were studied. Micro-Raman scattering was used to study the quality of epitaxial films and atomic force microscopy was used to study the surface topography. The results show the three-mode behavior of optical phonons in quaternary alloys. It was also found that the narrowest Raman linewidth and much weaker forbidden modes are found in the layer grown on InP(100).|
|Source Title:||Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Sep 20, 2018
WEB OF SCIENCETM
checked on Sep 5, 2018
checked on Aug 31, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.