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Samudra,Ganesh S

rp00141

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Full Name
Samudra,Ganesh S
Variants
Samudra, G.G.
SAMUDRA, GANESH SHANKAR
Samudra', G.S.
Samudra, Ganesh S.
Samudra, Ganesh Shankar
Shankar Samudra, Ganesh
Samudra, G.S.
Samudra, Ganesh
Samudra, G.
 
Main Affiliation
 
Faculty
 
Email
eleshanr@nus.edu.sg
 

Publications

Refined By:
Date Issued:  [2000 TO 2009]
Date Issued:  2006

Results 1-20 of 22 (Search time: 0.004 seconds).

Issue DateTitleAuthor(s)
1200650 nm silicon-on-insulator N-MOSFET featuring multiple stressors: Silicon-carbon source/drain regions and tensile stress silicon nitride linerAng, K.-W.; Chui, K.-J.; Chin, H.-C.; Foo, Y.-L.; Du, A.; Deng, W.; Li, M.-F. ; Samudra, G. ; Balasubramanian, N.; Yeo, Y.-C. 
22006A CMOS compatible smart power synchronous rectifierLim, C.Y.; Liang, Y.C. ; Samudra, G.S. ; Balasubramanian, N.
32006An FPGA based digital control design for high-frequency DC-DC convertersSingh, R.P.; Khambadkone, A.M. ; Samudra, G.S. ; Liang, Y.C. 
42006Carrier transport characteristics of Sub-30 nm strained N-channel FinFETs featuring silicon-carbon source/drain regions and methods for further performance enhancementLiow, T.-Y.; Tan, K.-M.; Chin, H.-C.; Lee, R.T.P. ; Tung, C.-H.; Samudra, G.S. ; Balasubramanian, N.; Yeo, Y.-C. 
52006Characterization and physical origin of fast vth Transient in NBTI of pMOSFETs with SiON dielectricShen, C.; Li, M.-F. ; Foo, C.E.; Yang, T.; Huang, D.M.; Yaps, A.; Samudra, G.S. ; Yeo, Y.-C. 
6Feb-2006Direct extraction of substrate network parameters for RF MOSFET modeling using a simple test structureMahalingam, U.; Rustagi, S.C.; Samudra, G.S. 
7Sep-2006Drive-current enhancement in FinFETs using gate-induced stressTan, K.-M.; Liow, T.-Y.; Lee, R.T.P. ; Tung, C.-H.; Samudra, G.S. ; Yoo, W.-J. ; Yeo, Y.-C. 
82006Fast erasing and highly reliable MONOS type memory with HfO2 high-k trapping layer and SI3N4/SiO2 tunneling stackWang, Y.Q.; Gao, D.Y.; Hwang, W.S.; Shen, C.; Zhang, G.; Samudra, G. ; Yeo, Y.-C. ; Yoo, W.J.
92006Fast Vth instability in HfO2 gate dielectric MOSFETs and Its impact on digital circuitsShen, C.; Yang, T.; Li, M.-F. ; Samudra, G. ; Yeo, Y.-C. ; Zhu, C.X. ; Rustagi, S.C.; Yut, M.B.; Kwong, D.-L.
10Dec-2006Fast Vth instability in HfO2 gate dielectric MOSFETs and its impact on digital circuitsShen, C.; Yang, T.; Li, M.-F. ; Wang, X.; Foo, C.E.; Samudra, G.S. ; Yeo, Y.-C. ; Kwong, D.-L.
112006High quality silicon-germanium-on-insulator wafers fabricated using cyclical thermal oxidation and annealingWang, G.H.; Toh, E.-H.; Foo, Y.-L.; Tung, C.-H.; Choy, S.-F.; Samudra, G. ; Yeo, Y.-C. 
12Dec-2006I-MOS transistor with an elevated silicon-germanium impact-ionization region for bandgap engineeringToh, E.-H.; Wang, G.H.; Chan, L.; Lo, G.-Q.; Samudra, G. ; Yeo, Y.-C. 
132006Modeling study of InSb thin film for advanced III-V MOSFET applicationsZhu, Z.G.; Low, T.; Li, M.F. ; Fan, W.J.; Bai, P.; Kwong, D.L.; Samudra, G. 
142006Novel nickel-alloy suicides for source/drain contact resistance reduction in N-channel multiple-gate transistors with sub-35nm gate lengthLee, R.T.P. ; Liow, T.-Y.; Tan, K.-M.; Lim, A.E.-J.; Wong, H.-S.; Lim, P.-C.; Lai, D.M.Y.; Lo, G.-Q.; Tung, C.-H.; Samudra, G. ; Chi, D.-Z.; Yeo, Y.-C. 
1515-Aug-2006Process flow for a performance enhanced MOSFET with self-aligned, recessed channelSNEELAL, SNEEDHARAN PILLAI; POH, FRANCIS; LEE, JAMES; SEE, ALEX ; LAU, C. K. ; SAMUDRA, GANESH SHANKAR 
162006Process-induced strained P-MOSFET featuring nickel-platinum silicided source/drainLee, R.T.P. ; Liow, T.-Y.; Tan, K.-M.; Ang, K.-W.; Chui, K.-J.; Guo, Q.-L.; Samudra, G. ; Chi, D.-Z.; Yeo, Y.-C. 
1710-May-2006Simulation of trapping properties of high κ material as the charge storage layer for flash memory applicationYeo, Y.N.; Wang, Y.Q.; Samanta, S.K. ; Yoo, W.J. ; Samudra, G. ; Gao, D.; Chong, C.C.
1810-May-2006Simulation of trapping properties of high κ material as the charge storage layer for flash memory applicationYeo, Y.N.; Wang, Y.Q.; Samanta, S.K. ; Yoo, W.J. ; Samudra, G. ; Gao, D.; Chong, C.C.
192006Slanted oxide-bypassed superjunction power MOSFETsChen, Y.; Liang, Y.C. ; Samudra, G.S. 
202006Strained N-channel FinFETs with 25 nm gate length and silicon-carbon source/drain regions for performance enhancementLiow, T.-Y.; Tan, K.-M.; Lee, R.T.P. ; Du, A.; Tung, C.-H.; Samudra, G.S. ; Yoo, W.-J. ; Balasubramanian, N.; Yeo, Y.-C.