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Samudra,Ganesh S

rp00141

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Full Name
Samudra,Ganesh S
Variants
Samudra, G.G.
SAMUDRA, GANESH SHANKAR
Samudra', G.S.
Samudra, Ganesh S.
Samudra, Ganesh Shankar
Shankar Samudra, Ganesh
Samudra, G.S.
Samudra, Ganesh
Samudra, G.
 
Main Affiliation
 
Faculty
 
Email
eleshanr@nus.edu.sg
 

Publications

Refined By:
Date Issued:  [2000 TO 2009]
Author:  Yeo, Y.-C.

Results 81-100 of 135 (Search time: 0.005 seconds).

Issue DateTitleAuthor(s)
812006Novel nickel-alloy suicides for source/drain contact resistance reduction in N-channel multiple-gate transistors with sub-35nm gate lengthLee, R.T.P. ; Liow, T.-Y.; Tan, K.-M.; Lim, A.E.-J.; Wong, H.-S.; Lim, P.-C.; Lai, D.M.Y.; Lo, G.-Q.; Tung, C.-H.; Samudra, G. ; Chi, D.-Z.; Yeo, Y.-C. 
822008Novel rare-earth dielectric interlayers for wide NMOS work-function tunability in Ni-FUSI gatesLim, A.E.-J.; Lee, R.T.P. ; Samudra, G.S. ; Kwong, D.-L.; Yeo, Y.-C. 
832007On the performance limit of impact-ionization transistorsShen, C.; Lin, J.-Q.; Toh, E.-H.; Chang, K.-F.; Bait, P.; Heng, C.-H. ; Samudra, G.S. ; Yeo, Y.-C. 
842008P-channel I-MOS transistor featuring silicon nano-wire with multiple-gates, strained Si1-yCy I-region, in situ doped Si 1-yCy source, and sub-5 mV/decade subthreshold swingToh, E.-H.; Wang, G.H.; Weeks, D.; Zhu, M. ; Bauer, M.; Spear, J.; Chan, L.; Thomas, S.G.; Samudra, G. ; Yeo, Y.-C. 
85May-2008P-channel tri-gate FinFETs featuring Ni1-yPtySiGe source/drain contacts for enhanced drive current performanceLee, R.T.-P. ; Tan, K.-M.; Lim, A.E.-J.; Liow, T.-Y.; Samudra, G.S. ; Chi, D.-Z.; Yeo, Y.-C. 
86Nov-2007Performance enhancement in uniaxial strained silicon-on-insulator N-MOSFETs featuring silicon-carbon source/drain regionsAng, K.-W.; Chui, K.-J.; Tung, C.-H.; Balasubramanian, N.; Samudra, G.S. ; Yeo, Y.-C. 
872007Performance enhancement of n-channel impact-ionization metal-oxide- semiconductor transistor by strain engineeringToh, E.-H.; Wang, G.H.; Lo, G.-Q.; Chan, L.; Samudra, G. ; Yeo, Y.-C. 
882008Performance enhancement schemes featuring lattice mismatched S/D stressors concurrently realized on CMOS platform: e-SiGeSn S/D for pFETs by Sn+ implant and SiC S/D for nFETs by C+ implantWang, G.H.; Toh, E.-H.; Wang, X.; Seng, D.H.L.; Tripathy, S.; Osipowicz, T. ; Tau, K.C.; Samudra, G. ; Yeo, Y.-C. 
892007Probing the ErSi1.7 Phase formation by micro-Raman spectroscopyLee, R.T.-P. ; Tan, K.-M.; Liow, T.-Y.; Ho, C.-S.; Tripathy, S.; Samudra, G.S. ; Chi, D.-Z.; Yeo, Y.-C. 
902006Process-induced strained P-MOSFET featuring nickel-platinum silicided source/drainLee, R.T.P. ; Liow, T.-Y.; Tan, K.-M.; Ang, K.-W.; Chui, K.-J.; Guo, Q.-L.; Samudra, G. ; Chi, D.-Z.; Yeo, Y.-C. 
91May-2008Pulsed laser annealing of silicon-carbon source/drain in MuGFETs for enhanced dopant activation and high substitutional carbon concentrationKoh, A.T.-Y.; Lee, R.T.-P. ; Liu, F.-Y.; Liow, T.-Y.; Tan, K.M.; Wang, X.; Samudra, G.S. ; Balasubramanian, N.; Chi, D.-Z.; Yeo, Y.-C. 
922008Realization of silicon-germanium-tin (SiGeSn) source/ drain stressors by Sn implant and solid phase epitaxy for strain engineering in SiGe channel P-MOSFETsWang, G.H.; Toh, E.-H.; Chan, T.K.; Osipowicz, T.; Foo, Y.-L.; Tung, C.H.; Lo, G.-Q.; Samudra, G. ; Yeo, Y.-C. 
932007Reduction of impact-ionization threshold energies for performance enhancement of complementary impact-ionization metal-oxide-semiconductor transistorsToh, E.-H.; Wang, G.H.; Chan, L.; Samudra, G. ; Yeo, Y.-C. 
942007Route to low parasitic resistance in MuGFETs with silicon-carbon source/drain: Integration of novel low barrier Ni(M)Si:C metal silicides and pulsed laser annealingLee, R.T.-P. ; Koh, A.T.-Y.; Liu, F.-Y.; Fang, W.-W.; Liow, T.-Y.; Tan, K.-M.; Lim, P.-C.; Lim, A.E.-J.; Zhu, M. ; Hoe, K.-M.; Tung, C.-H.; Lo, G.-Q.; Wang, X.; Low, D.K.-Y.; Samudra, G.S. ; Chi, D.-Z.; Yeo, Y.-C. 
95Mar-2005SDODEL MOSFET for performance enhancementChui, K.J.; Samudra, G.S. ; Yeo, Y.-C. ; Tee, K.-C.; Leong, K.-W.; Tee, K.M.; Benistant, F.; Chan, L.
962008Selenium Co-implantation and segregation as a new contact technology for nanoscale SOI N-FETs featuring NiSi:C formed on Silicon-carbon (Si:C) source/drain stressorsWong, H.-S.; Liu, F.-Y.; Ang, K.-W.; Koh, S.-M.; Koh, A.T.-Y.; Liow, T.-Y.; Lee, R.T.-P. ; Lim, A.E.-J.; Fang, W.-W.; Zhu, M. ; Chan, L.; Balasubramaniam, N.; Samudra, G. ; Yeo, Y.-C. 
97Oct-2009Selenium segregation for lowering the contact resistance in ultrathin-body MOSFETs with fully metallized source/drainWong, H.-S.; Chan, L.; Samudra, G. ; Yeo, Y.-C. 
982007Silicon nano-wire impact ionization transistors with multiple-gates for enhanced gate control and performanceToh, E.-H.; Wang, G.H.; Shen, C.; Zhu, M. ; Chan, L.; Heng, C.-H. ; Samudra, G. ; Yeo, Y.-C. 
992009Silicon-carbon formed using cluster-carbon implant and laser-induced epitaxy for application as source/drain stressors in strained n-channel MOSFETsKoh, S.-M.; Wang, X.; Sekar, K.; Krull, W.; Samudra, G.S. ; Yeo, Y.-C. 
100May-2008Silicon-carbon stressors with high substitutional carbon concentration and in situ doping formed in source/drain extensions of n-channel transistorsWong, H.-S.; Ang, K.-W.; Chan, L.; Hoe, K.-M.; Tung, C.-H.; Balasubramanian, N.; Weeks, D.; Bauer, M.; Spear, J.; Thomas, S.G.; Samudra, G. ; Yeo, Y.-C.